category » Electronic Devices
InGaAs is a promising candidate for channel material for future high-performance CMOS logic applications because of its superior electron transport…
A variety of compact MOSFET models are used for circuit simulation in both industry and academia, ranging from standard industrial…
The need for high speed and density in modern integrated circuits requires new MOSFET channel materials, techniques for improved carrier…
Historically, digital logic devices are benchmarked by the on-state current (Ion) at specified off-state current (Ioff) and supply voltage (Vdd)…
Recently, the demonstration of spin injection and transport in hybrid organic semiconductor (OS)-based devices [1] [2] [3] and the…
Over the last decade, quantum information experiments with trapped ions have demonstrated essential steps towards quantum computing and quantum simulation…
Superconducting nanowire avalanche photodetectors (SNAPs) [1] are based on a parallel architecture that performs single-photon counting with higher signal-to-noise ratio…
In this study, we demonstrated a high-resolution method for doubling the spatial frequency of lines and dots of structures defined…
In CMP process, the pad asperity modulus and asperity height are two important properties that affect the planarization results [1]…
In this work we propose a particle agglomeration model for CMP, to understand the creation and behavior of agglomerated slurry…
We seek to fabricate massively parallel waveguide lithium niobate spatial light modulators as an enabling technology for the next generation…
There is emerging interest in the ability to produce low-cost and lightweight solar cells and other electronics on flexible, stretchable,…
The low energy density of solar illumination necessitates deployment of solar technologies over large surface areas in order to capture…
In recent years, there has been an increasing interest in the use of PbS and PbSe quantum dots (QDs) for…
It has been known for several decades that polymers doped with conducting particles, for example silicone nickel nano-particles, will exhibit…
As demands for high storage density, high chip memory capacity, and decreasing process costs continue to mount, conventional flash memory…
Colloidal quantum dots (QDs) are semiconductor nanoparticles that can be used in monolayers in low operating-voltage, non-lithographically fabricated, thin film…
Colloidal quantum-dot light-emitting diodes (QD-LEDs) combine the thin film processability of organic materials with the tunable optical properties conferred by…
Thin Film Bulk Acoustic Resonators (FBARs) are widely used in the design of modern radio frequency components including duplexers, filters,…
Standard full chip capacitance extraction algorithms rely for computational efficiency on 2D scanning and table lookup algorithms. These algorithms trade…
The scaling of MOSFETs in recent years has pushed the gate length down to less than 20 nanometers. Further gate…
The GaN high-electron-mobility transistor (HEMT) is a very promising device for power-switching applications due to the outstanding material properties of…
As conventional Si CMOS scaling approaches the end of the roadmap, III-V based field-effect transistors appear as an increasingly viable…
In Si p-type metal-oxide-semiconductor field-effect transistors (MOSFETs), the incorporation of mechanical strain in the channel has greatly enhanced hole velocity…
Achieving a sharp subthreshold swing is crucial to enable the supply voltage scaling that is necessary for reducing power consumption…
Photovoltaics and sustainability have received a lot of attention lately. We seek a tandem photovoltaic device using silicon as both…
This paper discusses a way to optimize the In0.53Ga0.47As quantum-well MOSFET structures from the prospective of channel mobility. We experimentally…
Uniaxial strained Ge “nanobars” are of interest for future sub-10-nm gate length p-MOSFETs because of the excellent electrostatic control afforded…
Germanium is a promising candidate for use in CMOS-compatible photodiodes. Its strong absorption in the 1.55-µm range and relative ease…
The type-II band alignment between strained-silicon (s-Si) and strained-germanium (s-Ge) has been proposed for use in tunneling transistors due to…
To overcome the limitations of piezoelectric energy harvesters such as narrow bandwidth and low power density, our group has recently…
As process technology scales, the importance of material and architectural innovation for interconnect performance will continue to increase. Graphene has…
Gallium nitride (GaN) is a wide bandgap semiconductor with unsurpassed properties for high voltage switches and RF amplifiers. However, in…
AlGaN/GaN high electron mobility transistors (HEMTs) have attracted a great interest for the next generation of power electronics due to…
Thanks to its all-surface 2D structure combined with a very high carrier mobility, graphene is a very promising candidate for…
GaN-based transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. The high electron mobility in…
The use of gate dielectrics in AlGaN/GaN high electron mobility transistors (MIS-HEMTs) is attracting great interest for power applications since…
The combination of high critical electric field, carrier mobility and thermal stability makes GaN an ideal semiconductor for power switches…
Graphene is a two-dimensional (2D) material that has attracted great interest for electronic devices since the demonstration of field effect…
Recent technological advances in three-dimensional (3D) semiconductor fabrication have provided an implementation platform for powerful multicore, multiprocessor, and network-on-chip (NoC)…
Mammalian cell cultures dominate the biopharmaceutical industry because their products, valuable biotherapeutics including monoclonal antibodies, vaccines and growth factors, account…
We are investigating thermoelectric transport in light-emitting diodes (LEDs). Electro-luminescent cooling is a phenomenon in which the optical output power…
There exists great interest in the utilization of the human body as a possible power supply for running such electronics…
Block copolymer self-assembly on nanolithographically-defined templates has great potential in fabricating patterned media and devices at the nanometer scale. Current…
We are investigating the fabrication and magnetic properties of rings (Figure 1) for magnetic logic and memory devices. The magnetic…
Block copolymers can be used to make a variety of functional electronic or magnetic devices. We have developed pattern transfer…
Triblock terpolymers are interesting because they can form a much wider diversity of 3D structures than diblock copolymers, including rings…
Capacitors have attracted considerable attention due to their potential as an energy buffer in a hybrid energy system. Improvement of…
Gas sensors are essential in the monitoring, control, and reduction of harmful emissions in the environment [1] . Conductometric gas…
Field Emitter Arrays (FEAs) are excellent cold cathodes, but they have not found widespread adoption in demanding device applications because…
Organic semiconductor-based devices can easily be scaled to large areas and fabricated on flexible, elastic, and non-planar surfaces at low…
A near-ultraviolet (UV) sensor based on zinc oxide (ZnO) nanowires (NWs) that is sensitive to photo excitation at or below…
Optically transparent, wide band gap metal oxide semiconductors are a promising candidate for large area flexible electronics. Because most commercially…
The most common substrate for processing chemical vapor deposition (CVD) graphene and highly oriented pyrolytic graphite (HOPG) has been thermally…
Superconducting nanowire single-photon detectors (SNSPDs) [1] perform single-photon counting in the near‑infrared with outstanding performance. The main limitations of standard…
Compact models describing the voltage-dependent terminal current and charges (or equivalently, capacitances) are essential for small-signal and transient circuit simulation. …
GaN-based high electron mobility transistors (HEMTs) have great potential for high power/frequency applications due to their outstanding combination of large…