Electromechanical resonators such as quartz crystals, surface acoustic wave (SAW) resonators, and ceramic resonators have become essential components in electronic…
Over the last decade, quantum information experiments with trapped ions have demonstrated essential steps towards quantum computing and quantum simulation. …
The frequency performance of AlxGa1–xN/GaN high-electron-mobility transistors (HEMTs) has rapidly increased in recent years. Transistors with current gain cut-off frequencies…
We develop an in situ manufacturable method to passivate the III-V compound semiconductor (especially the GaAs) in an MOCVD system….
GaN-based high-electron-mobility transistors (HEMTs) have become one of the prime candidates for solid-state power amplifiers at frequencies above 30 GHz.
Characterization of thin-film layered materials is critical for many MEMS devices. Residual stresses from production determine both the final shape…
The within-wafer non-uniformity of the material removal rate has long been a concern in chemical-mechanical planarization (CMP). Pressure distribution is…
The remarkable improvement in the frequency response of silicon CMOS devices in recent years has motivated their use in millimeter-wave…
Multi-gate semiconductor nanowires (NWs) have recently drawn significant attention as potential channel structures in high-performance metal-oxide-semiconductor field-effect-transistors (MOSFETs) due to…
Figure 1: Measured transfer characteristics of ~15nm diameter gate-all-around nanowire p-MOSFETs with N=500 parallel nanowires and Al2O3/WN gate stack, demonstrating…
The size of power conversion electronics is a dominant obstacle to achieving further miniaturization and integration of many modern mobile…
Graphene is an exciting new material in the world of electron transport. At exactly one atom thick, graphene is an…
Figure 1: Time evolution of |IGoff| and stress voltage (VDSstress) in a step-stress-recovery experiment in the OFF-state in GaNHEMTs. VDS…
Figure 1: Cross-sectional TEM images of devices stressed at different voltages: right around Vcrit (left), and beyond Vcrit (right). GaN-based…
In this work we propose a particle-agglomeration model for CMP, to understand the creation and behavior of agglomerated slurry abrasive…
For modern electronic devices, the improvement of performance resulting from scaling is to a large extent attributed to the increase…
Thanks to the outstanding combination of its very small thickness (just one atom thick) and very high carrier mobility, graphene…
In a conventional BCS superconductor, conduction electrons with opposite spins are paired up to form Cooper pairs, which is the…
In commercial circuit simulators, behavioral blocks can be specified using Verilog-A, a language designed for describing analog circuits. For the…
Figure 1: a) The C-V characteristic of devices with PTCBI/C60 and without organic layer, and b) energy-band diagram and chemical…
GaN high-electron-mobility transistors (HEMTs) offer unprecedented high-voltage, high-power operation at RF frequencies due to their high band gap (3.4 eV)…
Figure 1: Experimental IV plots for tunneling in the [001] direction for 0.13% to 0.39% strain in the [110] direction….
Since its discovery in 2004, graphene has attracted great interest for novel electronic devices. Its extremely high electron and hole…
Metal-oxide-based field effect transistors (FETs) have been demonstrated with higher charge carrier mobilities, higher current densities, and faster response performance…
The incorporation of mechanical strain in the channel has greatly enhanced the carrier velocity and performance of both n- and…
We fabricate PbS colloidal quantum-dot (QD)-based solar cells using a fullerene derivative as the electron transporting layer (ETL). A thiol…
Figure 1: Electron microscope image of the weak-link region in a MgB2 thin film lateral device. The proximity of the…
Gas sensors play a vital role in public health and safety, industrial process control, and reduction of toxic emissions into the environment. Conductometric gas sensors based on semiconducting metal oxide (SMO, e.g., ZnO, TiO2, and SnO2) thin films are of high interest in many applications due to high sensitivity, small size, and simplicity of measurement
We have developed a low-power, battery-free tag for use in pervasive sensing applications such as wearable patient-monitoring systems or body-sensor…
We have developed an electrocardiogram (EKG) preamplifier with a power consumption of 2.8μW, 8.1μVrms input-referred noise, and a Common-Mode Rejection…
Pulse oximeters are ubiquitous in modern medicine for non-invasively measuring the percentage of oxygenated hemoglobin in a patient’s blood by…
Our group is focusing on the development of GaN power transistors grown on Si substrates. Si substrates are preferred to…
Enhancing carrier transport via a combination of strain and new materials is of interest to improve the performance of future…
The vapor-liquid-solid mechanism for growth of single-crystal whiskers and wires was originally discovered in the 1960s, but it has gained…
Devices made utilizing zinc oxide (ZnO) nanowires have been developed for a variety of different applications including tactile sensors, flex…
Modern CMOS processes need new methodologies to extract, characterize, and model process variations and their sources. Much work has been…
During the last few years, AlGaN/GaN high-electron-mobility transistors (HEMTs) have been intensively studied for high-frequency high-power applications. In spite of…
As conventional Si CMOS scaling approaches the end of the roadmap, III-V based MOSFETs are being considered as an alternative…