Silicon-on-lattice-engineered-substrates (SOLES), shown in Figure 1, were developed in our group as a substrate platform for integrating III-V devices with…
Integration of the InP lattice constant with Si CMOS platforms is motivated by the monolithic interconnection of III/V optoelectronic and…
Photovoltaics and sustainability have received a lot of attention lately. We seek a tandem photovoltaic device using silicon as both…
Heteroepitaxy of polar and non-polar semiconductors has long been a challenge for integrating different semiconductor material systems. Previous research in…
We develop an in situ manufacturable method to passivate the III-V compound semiconductor (especially the GaAs) in an MOCVD system….
Materials and devices: lattice-mismatched materials, III-V’s, IV’s, dielectrics; deposition including MOCVD; innovation and commercialization