RC-76. Blanchard, R., J. A. del Alamo, P. C. Chao, and S. B. Adams, "Hydrogen Degradation in InP HEMTs," 1998 IEEE International Electron Devices Meeting, San Francisco, CA, December 1998, pp. 231-234. (paper)
RC-75. Somerville, M. H., A. Ernst, and J. A. del Alamo, "A New Dynamic Model for the Kink Effect in InAlAs/InGaAs HEMTs," 1998 IEEE International Electron Devices Meeting, San Francisco, CA, December 1998, pp. 243-246. (paper)
RC-74. del Alamo, J. A. and M. H. Somerville, "Breakdown in Millimeter-Wave Power InP HEMTs: A Comparison with PHEMTs", Plenary Session Invited paper at IEEE Gallium Arsenide Integrated Circuits Symposium, Atlanta, GA, November 1998, pp. 7-10. (paper)
RJ-81. Somerville, M. H., R. Blanchard, J. A. del Alamo, K. G. Duh, and P. C. Chao, "A New Gate Current Extraction Technique for Measurement of On-State Breakdown Voltage in HEMTs", IEEE Electron Device Letters 19 (11), 405-407, November 1998. (paper)
RC-73. Krupenin, S., M. H. Somerville, R. R. Blanchard, J. A. del Alamo, K. G. Duh and P. C. Chao, "Physical Mechanisms Limiting the Manufacturing Yield of Millimeter-Wave Power InP HEMTs", 1998 European Gallium Arsenide and Related III-IV Compounds Application Symposium, Amsterdam (Holland), October 1998, pp. 533-538.
RJ-80. Somerville, M. H., J. A. del Alamo, and P. Saunier, "Off-State Breakdown in Power pHEMTs: The Impact of the Source", IEEE Transactions on Electron Devices 45 (9), 1883-1889, September 1998. (paper)
RC-71. del Alamo, J. A., W. T. Lynch and D. A. Antoniadis, "An Analytical Framework for First-Order CMOS Device Design", invited paper at 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, March 1998, pp. 83-90.
RJ-79. Henderson, R., J. A. del Alamo, T. Becker, J. Lawton, P. Moran, S. Shapiro, and D. Vlasak, "The Perils of Excellence: Barriers to Effective Process Development in the Product Oriented Firm", Production and Operations Management Journal, 7 (1), 2-18, Spring, 1998.
RJ-78. Ernst, A. N., M. H. Somerville and J. A. del Alamo, "A New Z11 Impedance Technique to Extract Mobility and Sheet Carrier Concentration in HEMTs", IEEE Transactions on Electron Devices 45 (1), 9-13, January 1998. (paper)