Jesús A. del Alamo


Brief Bio


Jesús del Alamo is Director of the Microsystems Technology Laboratories, Donner Professor, and Professor of Electrical Engineering in the Department of Electrical Engineering and Computer Science at MIT.

He holds degrees from Polytechnic University of Madrid (Telecommunications Engineer, 1980), and Stanford University (MS EE, 1983 and PhD EE, 1985). From 1977 to 1981 he was with the Institute of Solar Energy of the Polytechnic University of Madrid, investigating silicon photovoltaics. From 1981 to 1985, he carried out his PhD dissertation at Stanford University on minority carrier transport in heavily doped silicon. From 1985 to 1988 he was research engineer with NTT LSI Laboratories in Atsugi (Japan) where he conducted research on III-V heterostructure field-effect transistors. He joined MIT in 1988.

Over the years, Prof. del Alamo has carried out research on transistors and other electronic devices in a variety of material systems. He has worked on Si solar cells, Si Bipolar Junction Transistors, Si Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), SiGe heterostructure devices, GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs), InGaAs High Electron Mobility Transistors (HEMTs) and MOSFETs, InGaSb HEMTs, GaN HEMTs and MOSFETs, and more recently Diamond MOSFETs. He has also investigated quantum-effect devices based on AlGaAs/GaAs heterostructures. His current research interests focus on the physics, technology, modeling and reliability of new III-V compound semiconductor field-effect transistors for future logic applications. He is also interested in fundamental reliability physics of GaN transistors for RF power amplification and power switching applications. In addition, Prof. del Alamo is investigating the technology and pedagogy of online laboratories for science and engineering education (the iLab Project).

Prof. del Alamo's students have earned numerous best paper awards at national and international conferences. For his research on InGaAs Quantum-Well Field-Effect Transistors he was awarded the 2012 Intel Outstanding Researcher Award in Emerging Research Devices and the Semiconductor Research Corporation 2012 Technical Excellence Award.

Prof. del Alamo teaches undergraduate and graduate-level courses in electronics, electron devices and circuits, and advanced semiconductor device physics. Prof. del Alamo has received several teaching and achievement awards at MIT. In 1992 he was awarded the Baker Memorial Award for Excellence in Undergraduate Teaching. In 1993 he received the H. E. Edgerton Junior Faculty Achievement Award. In 2001, he received the Louis D. Smullin Award for Excellence in Teaching. In 2002, he received the Amar Bose Award for Excellence in Teaching. In 2003, he was named a MacVicar Faculty Fellow. In 2007, Prof. del Alamo was appointed Donner Professor. In 2012, Prof. del Alamo was awarded the IEEE 2012 Electron Devices Society Education Award "For pioneering contributions to the development of online laboratories for microelectronics education on a worldwide scale."

From 1991 to 1996, Prof. del Alamo was an National Science Foundation Presidential Young Investigator. In 1999 he was elected a corresponding member of the Royal Spanish Academy of Engineering. In 2005, he was elected a Fellow of the IEEE and in 2014 he was elected a Fellow of the American Physical Society.

Among other activities, Prof. del Alamo was Editor of IEEE Electron Device Letters from 2005 to 2014 and since 2013 he is the Director of the Microsystems Technology Laboratories at MIT.


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