Publications 2025
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RC-322 Shao, Y., D. Ma, D. A. Antoniadis, L. Wei, and J. A. del Alamo, “Enhancement-mode BEOL In2O3 FETs with Record Logic Performance: Experiments and Compact Modeling”. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, Dec. 6-10, 2025. (paper) (slides)
RC-321 Shao, Y., M. Kim, J. C.-C. Huang, D. A. Antoniadis, and J. A. del Alamo, “Single-domain Switching Dynamics in BEOL Nanoscale Ferroelectric Field-effect Transistors.” Invited paper, IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, Dec. 6-10, 2025 (paper) (slides)
RC-320 Shen, D., P. M. Solomon, G. Cohen, J. Rozen and J. A. del Alamo, “In-Situ Hydrogenated CMOS-Compatible WO3/Pd/PSG/WO3 ECRAM Discrete Polarization Switching in Nanoscale BEOL FE-FETs.” 23rd IEEE Non-Volatile Memory Technology Symposium (NVMTS), Atlanta, GA, Sept. 29 to Oct. 1, 2025.
RC-319 Bitton, S. and J. A. del Alamo, “Protonic ECRAM: Insights from 2D Simulations.” 23rd IEEE Non-Volatile Memory Technology Symposium (NVMTS), Atlanta, GA, Sept. 29 to Oct. 1, 2025.
RC-318 Shao, Y., D. A. Antoniadis and J. A. del Alamo, “Discrete Polarization Switching in Nanoscale BEOL FE-FETs.” Invited paper to 23rd IEEE Non-Volatile Memory Technology Symposium (NVMTS), Atlanta, GA, Sept. 29 to Oct. 1, 2025.
RC-316 Shao, Y., M. Kim, J. C.-C. Huang, T. E. Espedal, D. A. Antoniadis and J. A. del Alamo, “Accumulation and Relaxation of Single-Domain Polarization in Nanoscale Ferroelectric-Gate Metal-Oxide Transistors.” 83nd IEEE Device Research Conference (DRC 2025), Durham, NC, June 22-25, 2025.
RC-315 Espedal, T. E., Y. Shao, J. C.-C. Huang, E. R. Borujeny, D. A. Antoniadis and J. A. del Alamo, “Frequency-Dependent Wake-Up in Ferroelectric Hf0.5Zr0.5O2 Devices.” 83nd IEEE Device Research Conference (DRC 2025), Durham, NC, June 22-25, 2025.
RJ-230 Shao, Y., E. R. Borujeny, J. Navarro, J. C.-C. Huang, T. E. Espedal, D. A. Antoniadis and J. A. del Alamo, "Domain-level ferroelectric polarization switching in nanoscale oxide-channel ferroelectric field-effect transistors.” NanoLetters 25, 3173-3179 (2025). DOI: 10.1021/acs.nanolett.4c05731. (DOI)
RJ-229 Huang, M., L. Xu, J. A. del Alamo, J. Li and B. Yildiz, "Nonlinear ion dynamics enable spike timing de-pendent plasticity of electrochemical ionic synapses.” Advanced Materials, 2418484, 2025. DOI: 10.1002/adma.202418484.(DOI)