Publications 2017
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RC-269 Lu, W. I. P. Roh, D.-M. Geum, S.-H. Kim, J. D. Song, L. Kong and J. A. del Alamo, “10-nm Fin Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital Etch.” IEEE International Electron Devices Meeting, San Francisco, CA, December 2-6, 2017, pp. 433-436. (paper) (slides)
RC-268 Vardi, A., L. Kong, W. Lu, X. Cai, X. Zhao, J. Grajal and J. A. del Alamo, “Self-Aligned InGaAs FinFETs with 5-nm Fin-Width and 5-nm Gate-Contact Separation.” IEEE International Electron Devices Meeting, San Francisco, CA, December 2-6, 2017, pp. 429-412. (paper) (slides)
RC-267 Zhao, X., C. Heidelberger, E. A. Fitzgerald, W. Lu and J. A. del Alamo, “Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs.” IEEE International Electron Devices Meeting, San Francisco, CA, December 2-6, 2017, pp. 413-416. (paper) (slides)
RJ-187 Wu, Y. and J. A. del Alamo, “Anomalous Source-side Degradation of InAlN/GaN HEMTs under High-Power Electrical Stress.” IEEE Transactions on Electron Devices, Vol. 65, No. 11, pp. 4435-4441, November 2017. DOI: 10.1109/TED.2017.2754248. (paper)
RJ-186 Vardi, A., J. Lin, W. Lu, X. Zhao, A. Fernando-Saavedra and J. A. del Alamo, “A Si-compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs.” IEEE Transactions on Semiconductor Manufacturing, Vol. 30. No. 4, pp. 468-474. November 2017. (Cover Article) DOI: 10.1109/TSM.2017.2753141. (paper)
RC-266 del Alamo, J. A., X. Zhao, W. Lu, and A. Vardi, “Towards Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs and TFETs.” Invited Talk at 5th Berkeley Symposium, Berkeley, CA, October 19-20, 2017. (abstract) (slides)
RC-265 del Alamo, J. A., X. Cai, J. Lin, W. Lu, A. Vardi, and X. Zhao, “CMOS beyond Si: Nanometer-Scale III-V MOSFETs” Invited Talk at 31st Annual IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Miami, FL, October 19-21, 2017, pp. 25-29. (paper) (slides)
RC-264 Lu, W., X. Zhao and J. A. del Alamo, “Towards Sub-10 nm Diameter III-V Vertical Nanowire Transistors.” TECHCON 2017, Austin, TX, September 10-12, 2017. (paper) (slides)
RJ-185 del Alamo, J. A., A. Guo and S. Warnock, ”Gate Dielectric Reliability and Instability in GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors for Power Electronics.” Invited Feature Paper in Journal of Materials Research, Vol. 32, Issue 18, pp. 3458-3468, September 2017. DOI: 10.1557/jmr.2017.363. (paper)
RJ-182 Warnock, S., A. Lemus, J. Joh, S. Krishnan, S. Pendharkar and J. A. del Alamo . ”Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature.” IEEE Transactions on Electron Devices, Vol. 64, No. 8, pp. 1557-9646, Augut 2017. DOI: 10.1109/TED.2017.2717924. (paper)
RJ-181 Kai, N., A. K. Stemberg, E. X. Zhang, J. A. Kozub, R. Jiang, R. D. Schrimpf,R. A. Reed, D. M. Fleetwood, M. L. Alles, D. McMorrow, J. Lin, A. Vardi and J. A. del Alamo, “Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing with Tunable Wavelength.” IEEE Transactions on Nuclear Science, Vol. 64, No. 8, pp. 2069-2078, August 2017. DOI: 10.1109/TNS.2017.2699482. (paper)
RC-263 Gong, H., K. Ni, E. X. Zhang, A. L. Sternberg, J. A. Kozub, K. L. Ryder, R. F. Keller, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, A. Vardi, X. Cai, and J A. del Alamo, “Scaling effects on single-event transients in InGaAs FinFETs.” IEEE Nuclear Science and Space Radiation Effects Conference, New Orleans, LA, July 17-21, 2017. (poster)
RC-262 del Alamo, J. A., “Nanometer-Scale III-V 3D MOSFETs?” Invited Talk at 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, July 15-17, 2017. (slides)
RJ-180 Zhao, X., A. Vardi and J. A. del Alamo, “Sub-thermal Subthreshold Characteristics in Top-down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs.” IEEE Electron Device Letters, Vol. 38, No. 7, pp. 855-858, July 2017. DOI: 10.1109/LED.2017.2702612. (paper)
RJ-179 Lin, J., X. Cai, D. A. Antoniadis, and J. A. del Alamo, “The Importance of Ballistic Resistance in the Modeling of Nanoscale InGaAs MOSFETs.” IEEE Electron Device Letters, Vol. 38, No. 7, pp. 851-854, July 2017. DOI: 10.1109/LED.2017.2700385. (paper)
RJ-178 Lu, W., X. Zhao, D. Choi, S. El Kazzi and J. A. del Alamo, “Alcohol-Based Digital Etch for Sub-10 nm III-V Multigate MOSFETs.” IEEE Electron Device Letters, Vol. 38, No. 5, pp. 548-551, May 2017. DOI: 10.1109/LED.2017.2690598. (paper)
RJ-177 Zhao, X., C. Heidelberger, E. A. Fitzgerald, and J. A. del Alamo, ”Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs.” IEEE Transactions on Electron Devices, Vol. 64, No. 5, pp. 2161-2165, May 2017. DOI: 10.1109/TED.2017.2684707. (paper)
RJ-176 Guo, A. and J. A. del Alamo, “Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs.” IEEE Transactions on Electron Devices, Vol. 64, No.5, pp. 2142-2147, May 2017. DOI: 10.1109/TED.2017.2686840. (paper)
RC-261 Vardi, A., J. Lin, W. Lu, X. Zhao and J. A. del Alamo, “A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs.” Plenary Session Invited Talk Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Indian Wells, CA, AZ, May 22-25, 2017 (paper 3.2). (paper) (slides)
RC-258 del Alamo, J. A., “III-V Channel Transistors.” Invited Short Course Lecture at International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 24-27, 2017. (slides)
RC-257 Wu, Y. and J. A. del Alamo, “Gate current degradation in W-band InAlN/AlN/GaN HEMTs under Gate Stress.” IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, April 2-6, 2017, pp. 3B-4.1-3B-4.7. (paper) (slides)
RC-256 Warnock, S. and J. A. del Alamo, “Off-State TDDB in High-Voltage GaN MIS-HEMTs.” IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, April 2-6, 2017, pp. 4B-3.1-4B-3.6 (Best Student Paper Award). (paper) (slides)
RJ-175 Hemmi, F., C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, R. Otsuji and T. Suemitsu, “Neutral Beam Etching for Device Isolation in AlGaN/GaN HEMTs.” Physica Status Solidi A: Applications and Materials Science, Vol. 214, No. 3, pp. 1600617, March 2017. (paper)
RJ-174 López-Villegas, J. M., N. Vidal and J. A. del Alamo, “Optimized Toroidal Inductors versus Planar Spiral Inductors in Multilayered Technologies.” IEEE Transactions on Microwave Theory and Techniques, Vol. 65, No. 2, pp. 423-432, February 2017. (paper)
RJ-173 Kai, N., E. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, “Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Nuclear Science, Vol. 64, No. 1, pp. 239-244, January 2017. (paper)
RJ-172 Chou, P.-C., S.-H. Chen, T.-E. Hsieh, S. Cheng, J. A. del Alamo, and E. Y. Chang, “Evaluation and reliability assessment of GaN-on-Si MIS-HEMT for power switching applications.” Energies, vol. 10, p. 233, 2017. (paper)