Publications 2016
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RC-255 Cai, X., J. Lin, D. A. Antoniadis and J. A. del Alamo, “Electric-Field Induced F- Migration in Self-Aligned InGaAs MOSFETs and Mitigation.” IEEE International Electron Devices Meeting, San Francisco, CA, December 3-7, 2016, pp. 63-66. (paper) (slides)
RC-254 del Alamo, J. A., A. Guo, and S. Warnock, “Reliability and Instability of GaN MIS-HEMTs for Power Electronics.” Invited Talk at Materials Research Society Fall Meeting & Exhibit, Boston, MA, November 27-December 2, 2016. (slides)
RC-253 Warnock, S., A. C. Lemus and J. A. del Alamo, “Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs – The Role of Temperature.” International Workshop on Nitride Semiconductors (IWN), Orlando, FL, October 2-7, 2016. (slides)
RC-252 Wu, Y. and J. A. del Alamo, “Anomalous Source-Side Degradation of InAlN/GaN HEMTs under ON-State Stress.” International Workshop on Nitride Semiconductors (IWN), Orlando, FL, October 2-7, 2016. (slides)
RC-251 Guo, A. and J. A. del Alamo, “NBTI in GaN MOSFETs – SiO2 vs. SiO2/Al2O3.” International Workshop on Nitride Semiconductors (IWN), Orlando, FL, October 2-7, 2016. (slides)
RC-250 Kai, N., A. L. Sternberg, E. X. Zhang, J. A. Kozub, R. Jiang, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, J. Lin, A. Vardi and J. A. del Alamo, “Pulsed-Laser Transient Testing with Tunable Wavelength and High Resolution for High Mobility MOSFETs.” Radiation Effects on Components and Systems Conference (RADECS), Bremen, Germany, September 19-23, 2016. (paper)
RJ-171 Wu, Y. and J. A. del Alamo, “Electrical Degradation of InAlN/GaN HEMTs Operating under ON Conditions.” IEEE Transactions on Electron Devices, Vol. 63, No. 9, pp. 3487-3492, September 2016. (paper)
RJ-170 Vardi, A. and J. A. del Alamo, “Sub-10 nm fin-width self-aligned InGaAs FinFETs.” IEEE Electron Device Letters, Vol. 37, No. 9, pp. 1104-1107, September 2016. (paper)
RJ-169 del Alamo, J. A., A. Vardi, and X. Zhao, ”InGaAs FinFETs for future CMOS.” Invited Paper, Compound Semiconductor Magazine, August/September 2016, pp. 22-26. (paper) (link)
RJ-168 del Alamo, J. A., D. A. Antoniadis, J. Lin, W. Lu, A. Vardi, and X. Zhao, ”Nanometer-Scale III-V MOSFETs.” Invited Paper in IEEE Journal of Electron Devices Society, Vol. 5, No. 5, pp. 205-214, September 2016.(paper)
RJ-167 Lin, J., L. Czornomaz, N. Daix, D. A. Antoniadis and J. A. del Alamo, ”Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated with Silicon Active Substrate (III-V-OIAS).” IEEE Transactions on Electron Devices, Vol. 63, No. 8, pp. 3088-3095, August 2016. (paper)
RC-248 Kai, N., E. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, “Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs.” IEEE Nuclear and Space Radiation Effects Conference (NSREC), Portland, OR, July 11-15, 2016. (paper) (slides)
RC-247 Hemmi, F., C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J. A del Alamo, S. Samukawa, T. Otsuji and T. Suemitsu, “The effect of neutral beam etching on device isolation in AlGaN/GaN HEMTs.” Compound Semiconductor Week (CSW), Toyama, Japan, June 26-30, 2016. (paper)
RC-246 del Alamo, J. A., “Nanometer-Scale III-V CMOS.” Invited Plenary Talk at Compound Semiconductor Week (CSW), Toyama, Japan, June 26-30, 2016. (slides)
RC-245 Vardi, A., J. Lin, W. Lu, X. Zhao and J. A. del Alamo, “High aspect ratio InGaAs FinFETs with sub-20 nm fin width.” VLSI Technology Symposium, Honolulu, HI, June 13-17, 2016, pp. 136-137. (paper) (slides)
RC-244 López-Villegas, J. M., N. Vidal and J. A. del Alamo, “Toroidal versus Spiral Inductors in Multilayered Technologies.” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Francisco, CA, May 22-24, 2016. (paper)
RC-243 del Alamo, J. A., “Nanoscale III-V CMOS.” Invited Tutorial at SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Spring, NY, May 16-19, 2016. (slides)
RJ-163 Lin, J., Y. Wu, J. A. del Alamo and D. A. Antoniadis, ”Analysis of Resistance and Mobility in InGaAs Quantum-Well MOSFETs from Ballistic to Diffusive Regimes.” IEEE Transactions on Electron Devices, Vol. 63, No. 4, pp. 1464-1470, April 2016. (paper)
RJ-162 Lin, J., X. Cai, Y. Wu, D. A. Antoniadis, and J. A. del Alamo, ”Record Maximum Transconductance of 3.45 mS/µm for III-V FETs.” IEEE Electron Device Letters, Vol. 37, No. 4, pp. 381-384, April 2016. (paper)
RC-242 Warnock, S. and J. A. del Alamo, “Progressive Breakdown in High-Voltage GaN MIS-HEMTs.” IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, April 17-21, 2016. (paper) (slides)
RC-241 Guo, A. and J. A. del Alamo, “Negative-Bias Temperature Instability of GaN MOSFETs.” IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, April 17-21, 2016. Best Student Paper Award. (paper) (slides)
RJ-161 Lin, J., D. A. Antoniadis, and J. A. del Alamo, ”InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact Characterization.” IEEE Transactions on Electron Devices, Vol. 63, No. 3, pp. 1020-1026, March 2016. (paper)
RC-240 Mendes, L. A., L. W. Li, P. H. Bailey, K. R. DeLong and J. A. del Alamo, “Experiment Lab Server Architecture: a Web Services Approach to Supporting Interactive LabVIEW-based Remote Experiments under MIT’s iLab Shared Architecture.” 13th International Conference on Remote Engineering and Virtual Instrumentation (REV), Madrid, Spain, February 24-26, 2016, pp. 287-299. (paper)
RC-239 Warnock and J. A. del Alamo, “Characterization of Dielectric Breakdown in High-Voltage GaN MIS-HEMTs.” Microelectronics Reliability & Qualification Working Meeting, El Segundo, CA, Feb. 9-10, 2016. (slides)