Publications 1992
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RC-45. Eugster, C.C., P.R. Nuytkens, and J. A. del Alamo, "A Novel Analog-to-Digital Conversion Architecture Using Electron Waveguides", 1992 International Electron Devices Meeting, San Francisco, CA, December 1992, p. 495. (paper)
RC-44. del Alamo, J. A. and C.C. Eugster, "Electron Waveguide Devices", (invited) 19th International Symposium on Gallium Arsenide and Related Compounds, Karuizawa, Japan, September 1992; in Institute of Physics Conference Series 129, 287-292, 1993.
RC-43. Eugster, C.C., J. A. del Alamo, M.R. Melloch, and M.J. Rooks, "Effects of Single Impurity Scattering on One-Dimensional Quantum-Effect Devices", 50th Annual Device Research Conference, Cambridge, MA, June 1992; abstract published in IEEE Transactions on Electron Devices 39, 2642-2643, November 1992. (paper)
RC-42. Chu, W., C.C. Eugster, A. Moel, E.E. Moon, J. A. del Alamo, H.I. Smith, M.L. Schattenburg, K.W. Rhee, M.C. Peckerar, and M.R. Melloch, "Observation of Conductance Quantization in a GaAs Electron Waveguide Device Fabricated by Contact X-Ray Lithography", 36th International Symposium on Electron, Ion, and Photon Beams, Orlando, FL, May 1992; in Journal of Vacuum Science and Technology B 10, 2966, November-December 1992.
RJ-51. Eugster, C.C., J. A. del Alamo, M.R. Melloch, and M.J. Rooks, "The Effects of Single Scatterers on Transport and Tunneling in a Dual Electron Waveguide Device", Physical Review B, 46, 10146-10151, October 1992. (paper)
RJ-50. Bahl, S.R., M.H. Leary, and J. A. del Alamo, "Mesa-Sidewall Gate-Leakage in InAlAs/InGaAs Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices 39, 2037-2043, September 1992. (paper)
RJ-48. Bahl, S.R. and J. A. del Alamo, "Elimination of Mesa-Sidewall Gate-Leakage in InAlAs/InGaAs Heterostructures by Selective Sidewall Recessing", IEEE Electron Device Letters, 13, 195, April 1992.
RJ-49. del Alamo, J. A., "GaAs Integrated Circuit Manufacturing", MRS Bulletin 17, 42-44, April 1992.
RC-41. Bennett, B.R. and J. A. del Alamo, "High Quality InGaAs/InP and InAlAs/InP Heterostructures Beyond the Matthews-Blakeslee Critical Layer Thickness", 4th International Conference on InP and Related Materials, Newport, RI, April 1992, p. 650. (paper)
RC-40. Bahl, S.R., B.R. Bennett, and J. A. del Alamo, "A High-Voltage, Doubly-Strained In0.42A10.59As/n+-In0.65Ga0.35As HFET", 4th International Conference on InP and Related Materials, Newport, RI, April 1992, p. 222. (paper)
RJ-47. Greenberg, D.R., J. A. del Alamo, and R. Bhat, "A Recessed-Gate InAlAs/n+-InP HFET with an InP Etch-Stop Layer", IEEE Electron Device Letters, 13, 137, March 1992. (paper)
RJ-45. Bahl, S.R. and J. A. del Alamo, "Breakdown Voltage Enhancement from Channel Quantization in InAlAs/n-InGaAs Heterostructure Field-Effect Transistors", IEEE Electron Device Letters 13, 123, February 1992. (paper)
RJ-46. Eugster, C.C., J. A. del Alamo, M.J. Rooks, and M.R. Melloch, "Split-Gate Dual Electron Waveguide Device", Applied Physics Letters 60, 642, February 1992.
RC-39. del Alamo, J. A. and C.C. Eugster, "Tunneling Spectroscopy of a Leaky Electron Waveguide", International Workshop on Quantum-Effect Physics, Electronics and Applications, Luxor, Egypt, January 1992; in Institute of Physics Conference Series 127, p. 225.