Publications 1996
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RC-67. Somerville, M. H., and J. A. del Alamo "A Model for Tunneling-Limited Breakdown in High-Power HEMTs", 1996 International Electron Devices Meeting, San Francisco, CA, December 1996, pp. 35-38. (paper)
RJ-73. Greenberg, D.R. and J. A. del Alamo, "Nonlinear Source and Drain Resistance in Recessed-Gate Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices 43 (8), 1304-1306, August 1996. (paper)
RJ-76. Hu, Q., S. Verghese, R. A. Wyss, Th. Schapers, J. A. del Alamo, S. Feng, K. Yakubo, M. J. Rooks, M. R. Melloch and A. Forster, "High-frequency (f ~ 1 Thz) Studies of Quantum-effect Devices", Semiconductor Science and Technology 11, 1888-1894, 1996.
RJ-75. Somerville, M. H., J. A. del Alamo and W. Hoke, "Direct Correlation Between Impact and the Kink Effect in InA1As/InGaAs HEMTs", IEEE Electron Device Letters 17 (10), 473-475, October 1996. (paper)
RJ-74. Sinn, M. T., J. A. del Alamo, B. R. Bennett, K Haberman and F. G. Celii, "Characterization of Surface Roughness Anisotrophy on Mismatched InA1As/InP Heterostructures", Journal of Electronic Materials 25 (2), 313-319, 1996.
RC-66. Somerville, M. H., J. A. del Alamo and P. Saunier, "Off-State Breakdown in Power pHEMTs: The Impact of the Source", 54th Device Research Conference, Santa Barbara, CA, June 1996. (paper)