Publications 2018
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RC-280 Lu, W., Y. Lee, J. Murdzek, J. Gertsch, A. Vardi, L. Kong, S. M. George and J. A. del Alamo, “First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in-situ ALE-ALD.” IEEE International Electron Devices Meeting, San Francisco, CA, December 1-5, 2018, pp. 895-898. (paper) (slides)
RJ-198 El Kazzi, S., A. Alian, B. Hsu, P. Favia, C. Merckling, W. Lu, J. A. del Alamo, “Threading Dislocations Impact in Top-Down n+InAs/p+GaSb Nanowire Esaki Diodes Fabricated on Mismatched Substrates.” Journal of Applied Physics, Vol. 124, Issue 19, 195703, 19 November 2018. DOI: 10.1063/1.5049900. (paper)
RC-279 Tordjman, M., Z. Yin, Y. Lee, A. Vardi, R. Kalish and J. A. del Alamo, “Diamond:H/Transition Metal Oxides Transfer-Doping Efficiency and Transistors Performance.” Materials Research Society Fall Meeting & Exhibit, Boston, MA November 25-30, 2018. (paper) (slides)
RC-278 del Alamo, J. A., X. Zhao, W. Lu, A. Vardi and X. Cai, “Nanoscale III-V Electronics: InGaAs FinFETs and Vertical Nanowire MOSFETs.” Invited Plenary Talk at IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, October 14-17, 2018. (slides)
RJ-197 Roh, I.P, S. H. Kim, D.-M. Geum, W. Lu, Y. H. Song, J. A. del Alamo and J. D. Song, “Enhanced hole mobility in strained In0.25Ga0.75Sb Quantum Well with High Quality Al0.95 Ga0.05As Buffer Layer. Applied Physics Letters, Vol. 113, 093501 (2018). DOI: 10.1063/1.5043509. (paper)
RJ-196 Yin, Z., M. Tordjman, Y. Lee, A. Vardi, R. Kalish, J. A. del Alamo, “Enhanced Transport in Transistor by Tuning Transition-Metal Oxide Electronic States Interfaced with Diamond.” Science Advances 4, eaau0480, 28 September 2018. DOI: 10.1126/sciadv.aau0480. (paper)
RJ-195 Zhao, X., C. Heidelberger, E. A. Fitzgerald, W. Lu, A. Vardi and J. A. del Alamo, “Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs: Ni vs. Mo Contacts.” IEEE Transactions on Electron Devices, Vol. 65, No. 9, pp. 3762-3768, September 2018. DOI: 10.1109/TED.2018.2859202. (paper)
RJ-194 Zhao, X., W. Lu, A. Vardi and J. A. del Alamo, “Shrinking the vertical nanowire MOSFET.” Compound Semiconductor Magazine, Vol. 24, Issue 4, pp. 52-56, June 2018. (paper)
RC-276 Zhao, X., A. Vardi and J. A. del Alamo, “Modeling the Parasitic Bipolar Effect in InGaAs FinFETs.” Compound Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018.
RC-275 Lu, W. and J. A. del Alamo, “Digital Etch for InGaSb p-Channel FinFETs with 10 nm Fin Width.” Compound Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018. (slides)
RC-274 Vardi, A. and J. A. del Alamo, “Fin-Width Scaling of Highly-Doped InGaAs Fins.” Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018.
RC-273 Cai, X., J. Grajal and J. A. del Alamo, “Mobility extraction in thin-channel InGaAs MOSFETs.” Compound Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018.
RC-272 del Alamo, J. A., X. Cai, W. Lu, A. Vardi and X. Zhao, “III-V CMOS: Quo Vadis?” Invited Talk at Compound Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018. (slides)
RJ-193 Chou, P.-C., T. E. Hsieh, S. Cheng, J. A. del Alamo and E. Chang, “Comprehensive Dynamic On-Resistance Assessments in GaN-on-Si MIS-HEMTs for Power Switching Applications.” Semiconductor Science and Technology, Vol. 33, No.5, 055012, May 2018. DOI: 10.1088/1361-6641/aabb6a. (paper)
RJ-192 Yin, Z., M. Tordjman, A. Vardi, R. Kalish and J. A. del Alamo, “A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor.” IEEE Electron Device Letters, Vol. 39, No. 4, pp. 540-543, April 2018. DOI: 10.1109/LED.2018.2808463. (paper)
RJ-191 Zhao, X., A. Vardi and J. A. del Alamo, “Excess Off-State Current In InGaAs FinFETs.” IEEE Electron Device Letters, Vol. 39, No. 4, pp. 476-479, April 2018. DOI: 10.1109/LED.2018.2806559. (paper)
RC-271 del Alamo, J. A. and A. Guo, “Bias Stress Instability in GaN-based Field Effect Transistors.” Invited Talk at Material Research Society Spring Meeting & Exhibit, Phoenix, AZ, April 2-6, 2018. (slides)
RC-270 del Alamo, J. A., X. Cai, W. Lu, A. Vardi and X. Zhao, “III-V CMOS: Quo Vadis?” Invited Talk at Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2018), Granada, Spain, March 19-21, 2018. (slides)
RJ-190 El Kazzi, S., A. Alian, B. Hsu, A. S. Verhulst, A. Walke, P. Favia, B. Douhard, W. Lu, J. A. del Alamo, N. Collaert, and C. Merckling, “Careful Stoichiometry Monitoring and Doping Control During the Tunneling Interface Growth of an n+InAs(Si)/p+GaSb(Si) Esaki Diode.” Journal of Crystal Growth, Vol. 484, pp. 86-91, 15 February 2018. DOI: 10.1016/j.jcrysgro.2017.12.035. (paper)
RJ-189 Gong, H., K. Ni, A. E. X. Zhang, A. L. Sternberg, J. A. Kozub, K. L. Ryder, R. F. Keller, L. D. Ryder, S. M. Weiss, R. A. Weller, K. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, A. Vardi and J. A. del Alamo, “Scaling Effects on Single-Event Transients in InGaAs FinFETs.” IEEE Transactions on Nuclear Science, Vol. 65, No. 1, pp. 296-303, January 2018. DOI: 10.1109/TNS.2017.2778640. (paper)