Jesús A. del Alamo

MTL

Publications 2018

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RJ-193 Chou, P.-C., T. E. Hsieh, S. Cheng, J. A. del Alamo and E. Chang, “Comprehensive Dynamic On-Resistance Assessments in GaN-on-Si MIS-HEMTs for Power Switching Applications.” To be published, Semiconductor Science and Technology, Vol. 33, No.5, 055012, May 2018. DOI: 10.1088/1361-6641/aabb6a. (paper)

RJ-192 Yin, Z., M. Tordjman, A. Vardi, R. Kalish and J. A. del Alamo, “A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor.” IEEE Electron Device Letters, Vol. 39, No. 4, pp. 540-543, April 2018. DOI: 10.1109/LED.2018.2808463. (paper)

RJ-191 Zhao, X., A. Vardi and J. A. del Alamo, “Excess Off-State Current In InGaAs FinFETs.” IEEE Electron Device Letters, Vol. 39, No. 4, pp. 476-479, April 2018. DOI: 10.1109/LED.2018.2806559. (paper)

RC-271 del Alamo, J. A. and A. Guo, “Bias Stress Instability in GaN-based Field Effect Transistors.” Invited Talk at Material Research Society Spring Meeting & Exhibit, Phoenix, AZ, April 2-6, 2018. (slides)

RC-270 del Alamo, J. A., X. Cai, W. Lu, A. Vardi and X. Zhao, “III-V CMOS: Quo Vadis?” Invited Talk at Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2018), Granada, Spain, March 19-21, 2018.

RJ-190 El Kazzi, S., A. Alian, B. Hsu, A. S. Verhulst, A. Walke, P. Favia, B. Douhard, W. Lu, J. A. del Alamo, N. Collaert, and C. Merckling, “Careful Stoichiometry Monitoring and Doping Control During the Tunneling Interface Growth of an n+InAs(Si)/p+GaSb(Si) Esaki Diode.” Journal of Crystal Growth, Vol. 484, pp. 86-91, 15 February 2018. DOI: 10.1016/j.jcrysgro.2017.12.035. (paper)

RJ-189 Gong, H., K. Ni, A. E. X. Zhang, A. L. Sternberg, J. A. Kozub, K. L. Ryder, R. F. Keller, L. D. Ryder, S. M. Weiss, R. A. Weller, K. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, A. Vardi and J. A. del Alamo, “Scaling Effects on Single-Event Transients in InGaAs FinFETs.” IEEE Transactions on Nuclear Science, Vol. 65, No. 1, pp. 296-303, January 2018. DOI: 10.1109/TNS.2017.2778640. (paper)

Publications 2018

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