Publications 2022
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RJ-222 MIT Microelectronics Group, "Reasserting US Leadership in Microelectronics: The Role of Universities. The Bridge, Vol. 52, Issue 4, Winter 2022. (Link)
RJ-221 Onen, M., N. Emond, B. Wang, D. Zhang, F. Ross, J. Li, B. Yildiz and J. A. del Alamo, "Nanosecond Protonic Programmable Resistors under Extreme Electric Field. Science, Vol. 377, pp. 539-543, 29 July 2022. (DOI)
RJ-220 Kim, T., J. A. del Alamo and D. A. Antoniadis, "Switching Dynamics in Metal-Ferroelectric HfZrO2-Metal Structures. IEEE Transactions on Electron Devices, Vol. 69, No. 7, pp. 4016-4021, July 2022. (DOI)
RJ-219 Vardi, A., M. Tordjman, R. Kalish and J. A. del Alamo, "WO3 passivation of access regions in Diamond MOSFETs. IEEE Transactions on Electron Devices, Vol. 69, No. 6, pp. 3334-3340, June 2022. (DOI: 10.1109/TED.2022.316573.)
RJ-218 Shao, Y. and J. A. del Alamo, "Sub-10 nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs. IEEE Electron Device Letters, Vol. 43, No. 6, pp. 846-849, June 2022. (DOI)
RJ-217 Onen, M., T. Gokmen, T. K. Todorov, T. Nowicki, J. A. del Alamo, J. Rozen, W. Haensch and S. Kim, "Neural Network Training with Asymmetric Crosspoint Elements. Frontiers in Artificial Intelligence, Vol. 5, Article 891624, 09 May 2022. (DOI)
RJ-216 Shao, Y., M. Pala, D. Esseni and J. A. del Alamo, "Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10 nm Diameter. IEEE Transactions on Electron Devices, Vol. 69, No. 4, pp. 2188-2196, April 2022. (DOI)
RJ-215 Lee, E. S., J. Joh, D. S. Lee and J. A. del Alamo, Gate-Geometry Dependence of Electrical Characteristics of p-GaN Gate HEMTs. Applied Physics Letters, Vol. 120, 082104, 23 February 2022. (DOI)
RJ-214 Antoniadis, D., T. Kim and J. A. del Alamo, "Nucleation-Limited Switching Dynamics Model for Efficient Ferroelectrics Circuit Simulation. IEEE Transactions on Electron Devices, Vol. 69, No. 1, pp. 395-399, January 2022. (DOI)