Publications 2019
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RC-286 Yao, X., W. Lu, N. Emond, J. A. del Alamo, J. Li, and B. Yildiz, “Proton-intercalation Based Analog Resistive Switching for Neuromorphic Computing.” Materials Research Society Fall Meeting & Exhibit, Boston, MA, December 1-6, 2019. (abstract)
RC-285 Tordjman, Y. Lee, A. Vardi, R. Kalish and J. A. del Alamo, “Diamond:H/Transition-Metal Oxides Transistors: from MOSFET to MESFET.” Materials Research Society Fall Meeting & Exhibit, Boston, MA, December 1-6, 2019. (abstract) (slides)
RJ-207 Rau, M., J. Lin, D. A. Antoniadis, J. A. del Alamo and M. Luisier, “Investigation of source starvation in record III-V quantum well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 66, No. 11, pp. 4698-4705, November 2019. (DOI)
RJ-206 del Alamo, J. A. and E. S. Lee, “Stability and Reliability of Lateral GaN Power Field-Effect Transistors.” Invited Paper in Special Issue on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices of IEEE Transactions on Electron Devices, Vol. 66, No. 11, pp. 4578-4590, November 2019. (DOI)
RJ-205 Lu, W., Y. Lee, J. C. Gertsch, J. A. Murdzek, A. S. Cavanagh, L. Kong, J. A. del Alamo and S. M. George, “In situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multi-gate MOSFETs.” Nano Letters, Vol. 19, pp. 5159-5166, 2019. (DOI)
RJ-204 Srimani, T., G. Hills, X. Zhao, D. Antoniadis, J. A. del Alamo and M. M. Shulaker, “Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors.” Applied Physics Letters, Vol. 115, 063107, 2019. (DOI)
RC-284 Li, K., E. X. Zhang, S. Bonaldo, A. L. Sternberg, J. A. Kozub, M. Reaz, L. D. Ryder, K. L. Ryder, H. Gong, S. M. Weiss, R. A. Weller, A. Vardi, J. A. del Alamo, R. A. Reed, D. M. Fleetwood and R. D. Schrimpf, “Pulsed Laser-Induced Single-Event Transients in InGaAs FinFETs with Sub-10-nm Fin Widths.” Radiation and its Effects on Components and Systems (RADECS), Montpellier, France, September 16-20, 2019. (DOI)
RJ-203 Vidal, N. J. M. Lopez-Villegas, J. A. del Alamo, “Analysis and Optimization of Multi-Winding Toroidal Inductors for use in Multilayered Technologies.” IEEE Access, Vol. 7, pp. 93537-93544, July 11, 2019. (DOI)
RC-283 Yao, X., W. Lu, N. Emond, J. A. del Alamo, J. Li and B. Yildiz “Proton-intercalation Based Analog Resistive Switching for Neuromorphic Computing.” 22nd International Conference on Solid State Ionics (SSI), PyeongChang, Korea, June 16-21, 2019. (abstract) (slides)
RC-282 Cai, X., A. Vardi, J. Grajal, and J. A. del Alamo, “Reassessing InGaAs for Logic: Mobility Extraction in sub-10 nm Fin-Width FinFETs.” IEEE VLSI Technology Symposium, Kyoto, Japan, June 9-14, 2019. (DOI) (slides)
RJ-202 Zhao, X., A. Vardi and J. A. del Alamo, “Fin-Width Scaling of Highly-Doped InGaAs Fins.” IEEE Transactions on Electron Devices, Vol. 66, No. 6, pp. 2563-2568, June 2019. DOI: 10.1109/TED.2019.2912618. (paper)
RJ-201 Zhao, X., A. Vardi and J. A. del Alamo, “Excess OFF-State Current in InGaAs FinFETs: Physics of the Parasitic Bipolar Effect.” IEEE Transactions on Electron Devices, Vol. 66, No. 5, pp. 2113-2118, May 2019. DOI: 10.1109/TED.2019.2903912. (DOI)
RJ-200 Kanhaiya, P. S., Y. Stein, W. Lu, J. A. del Alamo and M. M. Shulaker, “X3D: Heterogeneous Monolithic 3D Integration of “X” (Arbitrary) Nanowires: Silicon, III-V, and Carbon Nanotubes.” IEEE Transactions on Nanotechnology, Vol. 18, pp. 270-273, 2019. DOI: 10.1109/TNANO.2019.2902114. (DOI)
RC-281 Lee, E. S., L. Hurtado, J. Joh, S. Krishnan, S. Pendharkar, and J. A. del Alamo, “Time-Dependent Dielectric Breakdown under AC Stress in GaN MIS-HEMTs.” IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, March 31-April 4, 2019. (DOI)
RJ-199 Lin, J., X. Zhao, I. Manglano, D. A. Antoniadis and J. A. del Alamo, “A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 66, No. 3, pp. 1208-1212, March 2019. DOI: 10.1109/TED.2019.2891751. (DOI)