RC-18. Crabbé, E. F., S. Swirhun, J. A. del Alamo, R.F.W. Pease, and R. M. Swanson, "Majority and Minority Carrier Transport in Polysilicon-Emitter Contacts", International Electron Device Meeting, Los Angeles, CA, December 1986, p. 28; also in Polysilicon-Emitter Bipolar Transistors, A.K. Kapoor and D. J. Roulston (eds.), IEEE Press, 1989, p. 100. (paper)
RC-16. Crabbé, E. F., J. A. del Alamo, R.F.W. Pease, and R. M. Swanson, "A Novel Polysilicon-Collector Bipolar Transistor for the Study of Polysilicon-Emitter Interface Physics", 44th Annual Device Research Conference, Amherst, MA, June 1986; abstract published in IEEE Transactions on Electron Devices ED-33, 1853, November 1986.
RJ-17. del Alamo, J. A., and R. M. Swanson, "Forward-Bias Tunneling: A Limitation to Bipolar Device Scaling", IEEE Electron Device Letters EDL-7, 629, November 1986. (paper)
RC-17. del Alamo, J. A., and R. M. Swanson, "Forward-Bias Tunneling Current Limits in Scaled Bipolar Devices", 18th International Conference on Solid State Devices and Materials, Tokyo, Japan, August 1986, p. 283. (paper)
RJ-16. Swirhun, S. E., J. A. del Alamo, and R. M. Swanson, "Measurement of Hole Mobility in Heavily Doped n-type Silicon", IEEE Electron Device Letters EDL-7, 168, March 1986. (paper)