Publications 2015
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RC-238 Lu, W., J. K. Kim, J. F. Klem, S. D. Hawkins and J. A. del Alamo, “An InGaSb p-Channel FinFET.” IEEE International Electron Devices Meeting, Washington, D.C., December 6-9, 2015, pp. 819-822.(paper) (slides)
RC-237 Vardi, A., X. Zhao and J. A. del Alamo, “Quantum-Size Effects in Sub 10 nm Fin Width InGaAs FinFETs.” IEEE International Electron Devices Meeting, Washington, D.C., December 6-9, 2015, pp. 807-810. (paper) (slides)
RJ-159 Lin, J., D. A. Antoniadis, and J. A. del Alamo, ”Impact of Intrinsic Channel Scaling on InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 62, No. 11, pp. 3470-3476, November 2015. (paper)
IL-217 del Alamo, J. A., “On the 50th Anniversary of Moore’s Law, Nanoelectronics at a Crossroads” (in Spanish), Universidad Politécnica de Madrid, November 23, 2015. (slides) (video)
RC-236 del Alamo, J. A. , D. A. Antoniadis, J. Lin, W. Lu, A. Vardi, and X. Zhao, “III-V MOSFETs for Future CMOS.” Invited Paper at IEEE Compound Semiconductor IC Symposium, New Orleans, LA, October 11-14, 2015. (paper) (slides)
IL-215 del Alamo, J. A., “Nanoscale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs,” Purdue University, West Lafayette, IN, September 29, 2015. (slides) (video)
RJ-158 Guo, L. W., W. Lu, B. R. Bennett, J. B. Boos, and J. A. del Alamo, ”Ultra-low Resistance Ohmic Contacts for p-channel InGaSb Field-Effect Transistors.” IEEE Electron Device Letters, Vol. 36, No. 6, pp. 546-548, June 2015. (paper)
RC-235 Lin, J., D. A. Antoniadis, and J. A. del Alamo, "A CMOS-compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs." (Best Student Paper Award) at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 239-242. (slides) (paper)
RC-234 Warnock, S. and J. A. del Alamo, "Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors." at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 311-314. (slides) (paper)
RJ-157 Lin, J., D. A. Antoniadis, and J. A. del Alamo, ”Physics and Mitigation of Excess Off-state Current in InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 62, No. 5, pp. 1448-1455, May 2015. (paper)
RC-233 Guo, A. and J. A. del Alamo, “Positive-Bias Temperature Instability of GaN MOSFETs.” IEEE International Reliability Physics Symposium, Monterey, CA, April 19-23, 2015, pp. 6C.5.1-6C.5.7. (paper) (slides)
RC-232 del Alamo, J. A. “Recent progress in understanding the electrical reliability of GaN High-Electron Mobility Transistors.” Invited Paper at Spring Meeting of Materials Research Society, San Francisco, CA, April 6-10, 2015. Video featured on MRS OnDemand Webinar on Power Electronics with Wide Bandgap Materials, Wednesday, May 20, 2015. (slides) (video)
RJ-156 Vardi, A., W. Lu, X. Zhao and J. A. del Alamo, "Nano-scale Mo Ohmic Contacts to III-V Fins." IEEE Electron Device Letters, Vol. 36, No. 2, pp. 126-128, February 2015. (paper)
RJ-155 Wu, Y., C.-Y. Chen, and J. A. del Alamo, "Electrical and structural degradation of GaN HEMTs under high-power and high-temperature DC stress." Journal of Applied Physics, Vol. 117, No. 2, p. 025707, 9 January 2015. (paper)