Electronic Devices
- Three-Dimensional Integration:
Analysis, Modeling, and Technology Development
- CMOS Technology for 25 nm Channel
Length
- Measurements and Simulation of
RF Power CMOS
- Exploring Transport in Ultra-Thin
Silicon Films for Double-Gate CMOS
- Strained Si/SiGe-on-Insulator
(SGOI) RF Power MOSFETs
- Temperature Dependent Mobility
Characterization and Modeling of Strained Si n-MOSFETs
- RF Power SOI LDMOSFET with
an Al/PolySi Gate
- Ultra-thin Strained Silicon
on Insulator MOSFET
- Dynamic VT Control with Optimized
Planar Double-Gate SOI Structure
- Mesoscopic Electronic Device Fabrication
- Optimization of Cells for Microscale
Themophotovoltaic Energy Conversion
- Microfabricated Magnetic Waveguides
for Bose-Einstein Condensates
- InP-HEMTs for Ultrahigh-Frequency
Power Devices
- Hydrogen Degradation of InP High
Electron Mobility Transistors
- Determining Dominant Breakdown
Mechanisms in InAlAs/InGaAs HEMTs
- CMOS-like Fabrication of InP-HEMTs
for 100 Gbit/s Photonics Applications
- Electrical Reliability of GaAs
PHEMTs
- Lateral p-i-n Photodiodes Fabricated
in a Commercial GaAs VLSI Process
- Mobility in Ultra-Thin SOI MOSFETs
- AlGaAs/GaAs HBT with Enhanced Forward
Diffusion
- Micromachining and Modeling of
Self-Focused Field Emission Electron Sources
- Field Emission from Organic Conductors
- Field Emission from Carbon Nanotubes
- Field Emitter Arrays for Low
Voltage Applications with Sub 100 nm Apertures and 200 nm Period
- Silicon MOSFET / Field Emission
Arrays Fabricated Using CMP
- SiGe-on-insulator (SGOI) Substrate
Fabrication and Strained-Si n-MOSFET on SGOI
- Electron Inversion Layer Mobility
in Strained-Si n-MOSFETs with High Channel Doping Concentration
Achieved by Ion Implantation