This equipment donated by Intel | |
CORAL Name: | tube6D-nitride |
Model Number: | Thermco LPCVD silicon nitride reactor |
Location: | ICL |
What it does: | Low-pressure chemical vapor deposition reactor. |
Introduction: |
THERMCO “tube6D-nitride” Furnace is a Low Pressure Chemical Vapor Deposition (LPCVD) Reactor, designated to deposit Silicon Nitride (Si3N4) thin films on Silicon wafers up 6 inch in diameter. The Silicon Nitride film is deposited by the reaction between DichlorSilane (SiCl2H2) and Amonia (NH3) at temperatures in the range of 750 C – 800C. The gases are injected into the reactor at the Load zone, and the vacuum port is located at Source zone end. The temperature profile is tilted, with a higher value at the Source end to compensate the gases depletion due to the vacuum pump action. The system low pressure is maintained by vacuum pump speed control at constant gas flow. The Silicon Nitride deposition process parameters are:
The THERMCO furnace is controlled by the TMX tube computer; while the SEMY supervisor system is used to monitor the system and to edit and store the process recipes. The THERMCO “tube6D-nitride” horizontal reactor is for CMOS process only. |
Safety: |
SiCl2H2 and NH3 are toxic gases; their Material Data Safety Sheet (MSDS) is in the yellow binder. The system has hardware and software safety interlocks, to prevent any SiCl2H2 and NH3-related hazard High temperature: many furnace parts can be hot. Use caution when handling them. |
Procedure: |
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Author: | Bernard Alamariu, 1/11 |