MTL Fabrication

RTA Machines Summary

RTA-NoMetal        ANNEALSYS

Location: ICL 

RTA-NoMetal.jpg

PTC: CMOS clean processes
Wafer size: Up to 6". / Cold walls system.
Temperature Range: 300C – 1100 C / Pyrometer control
                                         100C – 1000 C / Thermocouple control
Maximum ramp up: on Silicon wafer : 150C/sec
                                       on SiC susceptor: 30C/sec
Gases: N2 & O2 installed; (FG , NH3 and vacuum capable)


RTA-Pieces          ANNEALSYS

LOCATION: ICL

PTC: Au labeled machine: No photoresist or organic traces allowed.
Wafers size: Up to 2". / Hot wall system.
Temperature Range: 100C – 1000 C, under Thermocouple control.
Maximum ramp up: 30C /sec with SiC susceptor.
Gases: N2, NH3 & FG. Vacuum


RTA-Metal         AG-Associates 410

Location: ICL

PTC: CMOS metals only on Si, SiGe, Ge, Quartz, SiC.
Wafers size: Up to 6" / Hot wall system.
Temperature Range: 350C - 900C. TC control.
Gases: N2


RTA-HIT        ANNEALSYS

Location: TRL

PTC: Au labeled machine. No photoresist or organic traces allowed.
Wafers size: Up to 6".   / Cold walls system.
Temperature range:  400 C – 1200C : under Pyrometer control
                                         100 C -  1000C ; under Thermocouple control
Maximum ramp up: on Silicon wafers : 150C /sec
                                       on SiC susceptor:   30C /sec.
Gases: N2 & vacuum installed;  (O2 , FG & NH3 capable)


RTA –EML   AG Associates 210

Location EML

PTC : No process approval needed; material safety compliance  required.
Wafer size: UP to 4" / Hot walls system.
Temperature range: 100 C- 800C under Thermocouple control.
Ramp up:  50C/sec
Gases: N2, O2 & FG