| AME5000 | Applied Materials P5000 | 6” | ||
| Ch. A | gas | size (sccm) | notes: | |
| oxide | CHF3 | 150 | quartz clamp ring and cover | |
| nitride | CF4 | 36 | Backside He cooling | |
| Ar | 140 | Leybold NT340M turbopump | ||
| O2 | 100 | Edwards DP80 backing pump | ||
| cathode 20C | ||||
| chamber walls 20C | ||||
| Ch. B | gas | size (sccm) | notes: | |
| poly | Cl2 | 100 | Vespel clamp ring, quartz focus ring | |
| SiGe,Ge | HBr | 100 | Backside He cooling | |
| O2 | 20 | Leybold NT340M turbopump | ||
| SF6* | 85 | Ebara A10s backing pump | ||
| NF3* | 300 | cathode 20C | ||
| * gas is plumbed but not used | chamber walls 20C | |||
| Rainbow | Lam Rainbow 9600 | 6” | ||
| gas | size (sccm) | notes: | ||
| metal | BCl3 | 100 | ceramic clamp ring | |
| poly | Cl2 | 200 | backside He cooling | |
| oxide | N2 | 20 | Seiko-Seiki STP-H1000 turbopump | |
| SF6 | 30 | Ebara A10s backing pump | ||
| Ar | 200 | lower electrode 60C | ||
| O2 | 20 | upper electrode 70C | ||
| chamber walls 70C | ||||
| LAM490 | LAM 490B | 6” & smaller | ||
| 1 chamber | gas | size (sccm) | notes: | |
| nitride | C2F6* | 200 | EBARA A-10S as the process vacuum dry pump | |
| poly | O2 | 50 | Edwards E2M18 as the load-lock vacuum pump | |
| Ge | He | 200 | transport arm is C-shaped for 6” wafers | |
| Cl2 | 200 | no backside Helium, or wafer clamp | ||
| SF6 | 200 | lower electrode is cooled to 15 C | ||
| * gas is plumbed but not used | power supply is 600W RF | |||
| LAM590-ICL | LAM 590 | UCB | 6” & smaller | |
| 1 chamber | gas | size (sccm) | notes: | |
| oxide | CF4 | 200 | high RF power, 850 W, (max 1250) | |
| nitride | CHF3 | 100 | graphite top electrode provides C for high ox/Si selectivity | |
| He | 200 | wafer on the grounded electrode | ||
| O2 | 50 | Narrow electrode spacing | ||
| Spare | 200 | |||
| Plasmaquest | Plasmaquest | 4" & smaller | ||
| 1 chamber | gas | size (sccm) | notes: | |
| oxide | NH3 | 20 | EBARA A-10S as the process vacuum dry pump backing a turbo | |
| Si3N4 | SiH4* | 100 | Edwards E2M18 is the load-lock vacuum pump | |
| poly | BCl3 | 200 | transport arm is C-shaped for 4” wafers | |
| PI | Cl2 | 73 | no backside Helium, or wafer clamp | |
| parylene | SF6 | 58 | lower electrode has a temperature range of 10-80 C | |
| GaN | CF4 | 58 | chiller is in the lab | |
| InP | H2 | 268 | power supply is 700W | |
| GaAs | CH4 | 200 | ECR | |
| Ar | 176 | |||
| N2 | 200 | |||
| O2 | 42 | |||
| He | 139 | |||
| * gas is plumbed but not used | ||||
| LAM590-TRL | LAM 590 | UCB | 6” & smaller | |
| 1 chamber | gas | size (sccm) | notes: | |
| oxide | CF4 | 200 | high RF power, 850 W, (max 1250) | |
| nitride | CHF3 | 100 | graphite top electrode provides C for high ox/Si selectivity | |
| He | 200 | wafer on the grounded electrode | ||
| O2 | 50 | Narrow electrode spacing | ||
| Spare | 200 | |||
| Pegasus | STS | 6” & smaller | ||
| 1 chamber | gas | size (sccm) | notes: | |
| Si | SF6 | 1200 | Bosch process | |
| Nitride | C4F8 | 500 | DRIE | |
| O2 | 200 | can use handle wafers | ||
| Oxford-100 | Oxford-100 | 6” & smaller | ||
| 1 chamber | gas | size (sccm) | notes: | |
| oxide | BCl3 | 100 | Alcatel 2033 rough pump with Alcatel ATP-400 Turbo on Chamber | |
| nitride | Cl2 | 20 | Dry Pump on Loadlock | |
| silicon | Ar | 100 | 300W RF Power Supply | |
| SiC | N2 | 100 | No Bias Power Supply | |
| Moly | O2 | 100 | no backside Helium, or wafer clamp | |
| Ti | SF6 | 100 | Lower electrode chiller is in the cleanroom | |
| SAMCO | SAMCO 200iP | LL | 6” & smaller | |
| 1 chamber | gas | size (sccm) | notes: | |
| GaAs | Cl2 | 20 | Ebara EST10N dry pump with Osaka maglev turbopump on chamber | |
| InP | BCl3 | 50 | Alcatel Adixen rotary vane pump on loadlock | |
| GaN | SiCl4 | 20 | 1000W power supply for ICP | |
| GaP | Ar | 100 | 300W power supply for bias | |
| GaSb | N2 | 100 | 6" handler, but have carrier for 4" or pieces | |
| Si | CHF3 (cleaning gas) | 100 | electrostatic chuck | |
| poly | O2 | 100 | lower electrode has a temperature range of 50-250 C | |
| backside He cooling | ||||
| STS-1 | STS | 6” & smaller | ||
| 1 chamber | gas | size (sccm) | notes: | |
| Si | SF6 | ? | Bosch process | |
| nitride | C4F8 | ? | DRIE | |
| He | ? | can use handle wafers | ||
| allows metal masks | ||||
| STS-2 | STS | 6” & smaller | ||
| 1 chamber | gas | size (sccm) | notes: | |
| Si | SF6 | ? | Bosch process | |
| nitride | C4F8 | ? | DRIE | |
| He | ? | can use handle wafers | ||
| STS-3 | STS | 6” & smaller | ||
| 1 chamber | gas | size (sccm) | notes: | |
| Si | SF6 | ? | Bosch process | |
| nitride | C4F8 | ? | DRIE | |
| He | ? | can use handle wafers | ||
| allows exposed CMOS metal | ||||
