This equipment donated by Intel | |
CORAL Name: | tube6C-LTO |
Model Number: | Thermco LPCVD Low Temperature Oxide (LTO) reactor |
Location: | ICL |
What it does: | Low-pressure chemical vapor deposition reactor. |
Introduction: |
THERMCO “6C-LTO” Furnace is a Low Pressure Chemical Vapor Deposition (LPCVD)Reactor, designated to deposit thin Low Temperature Silicon Dioxide films on Silicon wafers up 6 inch in diameter. The LTO film is deposited by the reaction of Silane (SiH4) and Oxygen at low pressure (150–300 mTorr) in the temperature range of 400 – 450C The process runs in the “Reaction Rate Limited Regime”; i.e. operating at low pressure the mean free path of the reactant gases is high and assures an uniform gas supply, so the mass transfer to the Silicon substrate does not limit the deposition rate. In this regime the deposition thickness is a linear function of time. There is hazard of particles generation due to the Gas Phase Nucleation effect; a Quartz cage is used, to avoid the particles deposition on the wafers. The Silane and Oxygen are introduced into the reactor from both load and source zone Using two separate Quartz injectors; with an uniform gas concentration along the tube. That facilitates Using a flat temperature profile, which is easier to achieve at low temperature.
The THERMCO furnace is controlled by the TMX tube computer; while the SEMY supervisor system is used to monitor the system and to edit and store the process recipes. The THERMCO “6C-LTO” horizontal reactor is for CMOS process only. |
Safety: |
Silane SiH4 is a Pyrophoric gas , extremely flammable when it comes in contact with Oxygen or air. The Material Data Safety Sheet (MSDS) is in the yellow binder. The system has hardware and software safety interlocks, to prevent any Silane related hazard High temperature: many furnace parts can be hot. Use caution when handling them. Avoid breathing the LTO particles from the Quartz cage during wafer handling. |
Procedure: |
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Author: | Bernard Alamariu, 1/11 |