This equipment donated by Intel | |
CORAL Name: | tube6B-thickpoly |
Model Number: | Thermco LPCVD polysilicon reactor |
Location: | ICL |
What it does: | Low-pressure chemical vapor deposition reactor. |
Introduction: |
THERMCO “tube6B-thickpoly” Furnace is a Low Pressure Chemical Vapor Deposition (LPCVD) Reactor, designated to deposit PolySilicon thin films on Silicon wafers up 6 inch in diameter. The Polysilicon film is deposited by pyrolysis of Silane (SiH4) at low pressure ( 150–300 mTorr) in the temperature range of 580–625 °C. The Silane is injected into the reactor at the Load zone, and the vacuum port is located at Source zone end. The temperature profile is tilted, with a higher value at the Source end to compensate the Silane depletion due to the vacuum pump action. The system low pressure is maintained by vacuum pump speed control at constant gas flow. The Polysilicon deposition process parameters are:
The THERMCO furnace is controlled by the TMX tube computer; while the SEMY supervisor system is used to monitor the system and to edit and store the process recipes. The THERMCO “tube6B-thickpoly” horizontal reactor is for CMOS process only. |
Safety: |
Silane SiH4 is a Pyrophoric gas , extremely flammable when it comes in contact with Oxygen or air. The Material Data Safety Sheet (MSDS) is in the yellow binder. The system has hardware and software safety interlocks, to prevent any Silane related hazard High temperature: many furnace parts can be hot. Use caution when handling them. |
Procedure: |
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Author: | Bernard Alamariu, 1/11 |