This equipment donated by Intel | |
CORAL Name: | tube6a-npoly |
Model Number: | Thermco LPCVD polysilicon reactor |
Location: | ICL |
What it does: | Low-pressure chemical vapor deposition reactor. |
Introduction: |
THERMCO “6A-nPoly” Furnace is a Low Pressure Chemical Vapor Deposition (LPCVD)Reactor, designated to deposit Phosphor Doped PolySilicon thin films on Silicon wafers up 6 inch in diameter. The Polysilicon film is deposited by pyrolysis of Silane (SiH4) and Phosphine (PH3) at low pressure( 150 – 300 mTorr) in the temperature range of 560 – 625° C. The process runs in the “Reaction Rate Limited Regime”; i.e. operating at low pressure the mean free path of the reactant gases is high and assures an uniform gas supply, so the mass transfer to the Silicon substrate does not limit the deposition rate. In this regime the deposition thickness is a linear function of time. The Silane and the 1.5%PH3/SiH4 mixture are injected into the reactor at the Load zone, and the vacuum port is located at Source zone end. The Polysilicon deposition process parameters are:
The THERMCO furnace is controlled by the TMX tube computer; while the SEMY supervisor system is used to monitor the system and to edit and store the process recipes. The THERMCO “6A-CMOS- Poly” horizontal reactor is for CMOS process only. |
Safety: |
Silane SiH4 is a Pyrophoric gas , extremely flammable when it comes in contact with Oxygen or air. The Material Data Safety Sheet (MSDS) is in the yellow binder. PH3 in 98.5% SiH4 mixture is a dangerous gas too. The system has hardware and software safety interlocks, to prevent any Silane related hazard High temperature: many furnace parts can be hot. Use caution when handling them. |
Procedure: |
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Author: | Bernard Alamariu, 1/11 |