Procedure: |
If you need to do either Al or Cu deposition,
please check the maintenance section on Coral to see which
target is currently installed. If you need the other
target installed, please contact Eric Lim (x3-6897, eslim@mtl.mit.edu)
to have the necessary target installed.
- Engage
system on CORAL. The CORAL interlock disables the hoist
for the chamber, so you must be engaged in order to load
or unload your samples.
- Make sure ac power enable and hoist
power enable toggle switches are on and the indicator lamps
are on.
- Make sure the hivac, slow rough and fast rough valves
are closed (down), the Ar valve toggle switch is off
(down), table motor is off, and the throttle valve rotary
switch is set to “open”.
- Turn
off the ion gauge (open the panel for the ion gauge
controller and press the IG1 button)
Loading
- Bring the chamber
up to atmosphere by opening the vent valve (toggle switch
up).
- When the convectron gauge pressure reads 760Torr (7.6e2)
use the “hoist up” switch
to raise top until the red “Chamber lid open upper limit” lamp
turns on.
- Close the vent valve.
- Load wafers onto tray, deposition
side up.
- Lower hoist Using the “hoist down” switch
until the green “Chamber lid closed lower limit” lamp
turns on. Make sure the chamber lid is centered over the lower
chamber as you close it.
- Open the slow rough valve.
- When the convectron
gauge pressure reads below 450T (4.5e2) open
the fast rough valve. Leave
the slow rough valve on as well.
- When the convectron gauge pressure
reads below 50mT (5e-2), close both the fast
and slow rough valves and open the hivac valve.
- The ion gauge
should automatically turn on once the convectron reads
below range (below 1e-4). If
it does not come on, open the ion gauge control panel and press
the “IG1” button to turn it on manually.
- After roughly
2 hours, the chamber should pump down to around
3e-6, and you are ready to begin deposition.
Deposition
- Turn
the magnetron key from “off” to “program”.
- The unit should
start beeping and the vacuum and water LEDs
and the “off” button
should be blinking. Press the “off” button
to clear the alarms, the LEDs should stop blinking.
- Program power
and time parameters for the appropriate target
(target 1 for Al or Cu, target 2 for Ti, and target 3 for
Au). Please see the “Recipes” appendix
at the end of the SOP for specific process conditions. All adjustment
to the power and time settings are done with the rotary knob
on the magnetron control panel. To set the power level, press
and hold the “Level” button and adjust with the rotary
knob. To set the ramp time, press and hold the “Ramp” button.
To set the deposition time, press and hold the “Ramp” button,
then press and release the “Setpt” button. The Ar
flow, pressure setpoint, and table rotation speed should not
be adjusted.
- Once the recipe is programmed and the tool has reached
base pressure (typically around 3e-6 range),
open the Ar valve. The flow should read 50sccm.
- Turn the throttle
valve rotary switch to the “Auto” position. The manometer readout
should stabilize at 8 mTorr.
- Start table rotation. Knob
is marked at the 12rpm position. Do not adjust.
- Enable magnetron
with magnetron power toggle switch. The
magnetron enable indicator lamp should come on.
- Move the target
shutter to pre-sputter position (any target other than
your deposition target.)
- Switch the magnetron display to read
minutes. You can toggle through the parameters
by pressing the “actual” button.
- Start the pre-sputter
by pressing the “on” button on the magnetron panel. You
should be able to see a plasma up near the target when you open
the view port shutter. The power output should be ramping
up, and the timer should be counting down from the programmed
ramp/pre-sputter time. The output, plasma, and ramp status
LEDs should be on, along with the water and vacuum status LEDs.
- If
you do not see plasma and/or the plasma
indicator lamp on the magnetron control panel isn’t on, you shut off the Ar momentarily
and turn it back on. This creates a short pressure spike which
can help with plasma ignition. This tends to happen more
for Ti deposition than for any other film.
- When the ramp/pre-sputter
time has elapsed (the machine will
beep and the ramp led will go off, the setpt led should come
on) move the target shutter to appropriate target. The timer should be counting up
to your preset deposition time.
- The power will turn off automatically
when the step time has elapsed. At
this point your deposition is complete.
Unloading
- Turn off
the “magnetron enable” toggle
switch.
- Turn the throttle valve rotary switch to “open”.
- Stop
the Ar flow by turning flipping down
the Ar valve toggle switch.
- Stop table rotation.
- Close the
hivac valve, and make sure both roughing valves are closed.
- Let
the system pump back down to base pressure (typically
around 3e-6)
- Turn off the ion gauge
- Open the vent valve.
- When
the convectron gauge pressure reads >760Torr (7.6e2) use the “hoist
up” switch to raise top until the red “Chamber lid
open upper limit” lamp turns on.
- Close the vent valve.
- Unload
your wafers.
- Lower hoist Using
the “hoist down” switch
until the green “Chamber lid closed lower limit” lamp
turns on. Make sure the chamber lid is centered over the lower
chamber as you close it.
- Open the slow rough valve.
- When the convectron
gauge pressure reads below
450T (4.5e2) open the fast rough valve. Leave
the slow rough valve on as well.
- When the convectron gauge
pressure reads below
50mT (5e-2), close both the fast and slow rough valves and
open the hivac valve.
- Disengage the system on CORAL.
If you
have any problems or questions, please contact: Eric
Lim (primary) x3-6897eslim@mtl.mit.edu or
Bob Bicchieri (backup) X3-6418bic@mtl.mit.edu
Recipes
|
power |
ramp time* |
Ar |
pressure |
table rotation |
rate |
|
(KW) |
(min) |
(sccm) |
(mTorr) |
(rpm) |
(A/min) |
Al dep |
2 |
2 |
50 |
8 |
12 |
325 |
|
|
|
|
|
|
|
Au dep |
1 |
0.5 |
50 |
8 |
12 |
400 |
|
|
|
|
|
|
|
Ti dep |
1 |
2 |
50 |
8 |
12 |
120 |
|
|
|
|
|
|
|
Cu dep |
2 |
2 |
50 |
8 |
12 |
320 |
* The ramp time is important because
we use it as our pre-sputter time to clean the target surface
of any oxidation before deposition. |