MTL Annual Report

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• Logic Characteristics of 40-nm Thin-channel InAs HEMTs

  • As conventional Si CMOS scaling approaches the end of the roadmap, III-V based MOSFETs are being considered as an alternative…

• Materials Reliability in GaN-based Devices

  • GaN-based devices, traditionally used for light-emitting diodes, are becoming very attractive for high-power, high-frequency applications for a variety of radar…

• Performance Enhancement of III-V FETs through Uniaxial Strain

  • The incorporation of mechanical strain in the channel has greatly enhanced the carrier velocity and performance of both n- and…

• InGaAs MOS Transistor for Advanced Logic Application

  • For modern electronic devices, the improvement of performance resulting from scaling is to a large extent attributed to the increase…

• Defect Formation around the Critical Voltage in Electrically Stressed GaN HEMTs

  • Figure 1: Cross-sectional TEM images of devices stressed at different voltages: right around Vcrit (left), and beyond Vcrit (right). GaN-based…

• A High-voltage Degradation Mechanism of GaN HEMTs

  • Figure 1: Time evolution of |IGoff| and stress voltage (VDSstress) in a step-stress-recovery experiment in the OFF-state in GaNHEMTs. VDS…

• Jesús A. del Alamo

  • Microelectronics device technologies for gigahertz and gigabit-per-second communication systems: physics, modeling, technology and design. InGaAs as a post-CMOS semiconductor logic technology. Reliability of GaN transistors. Technology and pedagogy of online laboratories for engineering education.

• RF Power CMOS for Millimeter-wave Applications

  • The remarkable improvement in the frequency response of silicon CMOS devices in recent years has motivated their use in millimeter-wave…