During the last few years, AlGaN/GaN high-electron-mobility transistors (HEMTs) have been intensively studied for high-frequency high-power applications. In spite of…
Our group is focusing on the development of GaN power transistors grown on Si substrates. Si substrates are preferred to…
GaN-based devices, traditionally used for light-emitting diodes, are becoming very attractive for high-power, high-frequency applications for a variety of radar…
Since its discovery in 2004, graphene has attracted great interest for novel electronic devices. Its extremely high electron and hole…
GaN high-electron-mobility transistors (HEMTs) offer unprecedented high-voltage, high-power operation at RF frequencies due to their high band gap (3.4 eV)…
Thanks to the outstanding combination of its very small thickness (just one atom thick) and very high carrier mobility, graphene…
GaN-based high-electron-mobility transistors (HEMTs) have become one of the prime candidates for solid-state power amplifiers at frequencies above 30 GHz.
The frequency performance of AlxGa1–xN/GaN high-electron-mobility transistors (HEMTs) has rapidly increased in recent years. Transistors with current gain cut-off frequencies…
Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices; nanowires and graphene –based transistors.