MTL Annual Report

Graduate Students

• Yu Bai, Research Assistant, MSE
• Steve Boles, Research Assistant, MSE
• Chengwei Chen, Research Assistant, MSE
• Adam Jandl, Research Assistant, MSE
• Li Yang, Research Assistant, MSE
• Nan Yang, Research Assistant, MSE
• Prithu Sharma, Research Assistant, MSE

Research Scientist

• Dr. Mayank Bulsara

Support Staff

• Gabrielle Joseph

Publications

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al₂O₃ on GaAs, Cheng-Wei Cheng; Hennessy, J.; Antoniadis, D.; Fitzgerald, E.A. Applied Physics Letters,  v 95, n 8, p 082106 (3 pp.),  24 Aug. 2009.

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration; Yang, N; Bulsara, M.T.; Fitzgerald, E.A.; Liu, W.K.; Lubyshev, D.; Fastenau, J.M.; Wu, Y.; Urteaga, M.; Ha, W.; Bergman, J.; Brar, B.; Drazekd, C.; Daval, N.; Benaissa, L.; Augendre, E.; Hoke, W.E.; LaRoche, J.R.; Herrick, K.J.; Kazior, T.E. 2009 IEEE International SOI Conference, p 2 pp.,  2009.

Arrayed Si/SiGe nanowire and heterostructure formations via au-assisted wet chemical etching method; Wang, X. ; Pey, K.L.; Choi, W.K.; Ho, C.K.F.; Fitzgerald, E.; Antoniadis, D. Electrochemical and Solid-State Letters, v 12, n 5, p 37-40,  May 2009.

Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting; Liang Zhang ; Jing Hua Teng; Soo Jin Chua; Fitzgerald, E.A. Applied Physics Letters,  v 95, n 26, p 261110 (3).

Growth of highly tensile-strained Ge on relaxed In_xGa_1-xAs by metal-organic chemical vapor deposition; Yu Bai ; Lee, K.E.; Chengwei Cheng; Lee, M.L.; Fitzgerald, E.A. Journal of Applied Physics,  v 104, n 8, p 084518 (9 pp.),  15 Oct. 2008.

Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth; Hartono, H. Soh, C.B.; Chua, S.J.; Fitzgerald, E.A. Physica Status Solidi C,  v 4, n 7, p 2572-5,  June 2007.

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors; Cheng, C.-W. ; Fitzgerald, E.A. Applied Physics Letters,  v 93, n 3, p 031902-1-3,  21 July 2008

MBE growth of InP-HBT structures on Ge-on-insulator/Si substrates by MBE; Lubyshev, D. ; Fastenau, J.M.; Wu, Y.; Liu, W.K.; Urteaga, M.; Ha, W.; Bergman, J.; Brar, B.; Bulsara, M.T.; Fitzgerald, E.A.; Hoke, W.E.; LaRoche, J.R.; Herrick, K.J.; Kazior, T.E. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM), p 3 pp.,  2008.

Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces; Quitoriano, N.J. ; Fitzgerald, E.A. Journal of Applied Physics,  v 101, n 7, p 73509-1-10,  1 April 2007.

Monolithic III-V/Si integration; Fitzgerald, E.A. ; Bulsara, M.T.; Bai, Y.; Cheng, C.; Liu, W.K.; Lubyshev, D.; Fastenau, J.M.; Wu, Y.; Urtega, M.; Ha, W.; Bergman, J.; Brar, B.; Drazek, C.; Daval, N.; Letertre, F.; Hoke, W.E.; LaRoche, J.R.; Herrick, K.J.; Kazior, T.E. 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), p 4 pp.,  2008.

Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES); Chilukuri, K.; Mori, M.J.; Dohrman, C.L.; Fitzgerald, E.A. Semiconductor Science and Technology,  v 22, n 2, p 29-34,  Feb. 2007.

Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices; Dohrman, C.L. ; Chilukuri, K.; Isaacson, D.M.; Lee, M.L.; Fitzgerald, E.A. Materials Science & Engineering B (Solid-State Materials for Advanced Technology),  v 135, n 3, p 235-7,  15 Dec. 2006.

Strained and relaxed SiGe for high-mobility MOSFETs; Lee, M.L. ; Antoniadis, D.A.; Fitzgerald, E.A. 2006 International SiGe Technology and Device Meeting (IEEE Cat. No. 06EX1419), p 158-9,  2006.