Enhancing carrier transport via a combination of strain and new materials is of interest to improve the performance of future…
Figure 1: Experimental IV plots for tunneling in the [001] direction for 0.13% to 0.39% strain in the [110] direction….
Figure 1: a) The C-V characteristic of devices with PTCBI/C60 and without organic layer, and b) energy-band diagram and chemical…
Figure 1: Measured transfer characteristics of ~15nm diameter gate-all-around nanowire p-MOSFETs with N=500 parallel nanowires and Al2O3/WN gate stack, demonstrating…
Multi-gate semiconductor nanowires (NWs) have recently drawn significant attention as potential channel structures in high-performance metal-oxide-semiconductor field-effect-transistors (MOSFETs) due to…
Fabrication and device physics of silicon-based heterostructures and nanostructures. High mobility Si and Ge-channel MOSFETs, nanowire FETs, novel transistor structures, and silicon-germanium photodetectors for electronic/photonic integrated circuits.