MTL Annual Report

Collaborators

• Dimitri Antoniadis, EECS
• Karl Berggren, EECS
• Franz Kartner, EECS
• Rajeev Ram, EECS
• Michael Canonico, ASU
• Ted Lyszczarz, MIT Lincoln Labs
• Jung Yoon, MIT Lincoln Labs

Graduate Students

• Nicole DiLello, EECS
• Leonardo Gomez, EECS
• Pouya Hashemi, EECS
• Meekyung Kim, DMSE
• Jamie Teherani, EECS

RESEARCH STAFF

• Gary Riggott, Research Specialist
• Hyung-Seok Lee, Postdoctoral Scholar

Support Staff

• Whitney Rokui, Administrative Assistant II

Publications

P. Hashemi, M. Kim, J. Hennessy, L. Gomez, D.A. Antoniadis and J.L. Hoyt, “Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire MOS­FETs”, Appl. Phys. Lett. 96 (6), p. 063109, Feb. 2010.

L. Gomez, P. Hashemi, and J.L. Hoyt, “Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs,” IEEE Transactions on Electron Devices vol.56, no.11, pp.2644-2651, Nov. 2009.

O.M. Nayfeh, J.L. Hoyt and D.A. Antoniadis, “Strained Si1-xGex/Si Band-to-Band Tunneling Transis­tors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switch­ing Behavior,” IEEE Transactions on Electron Devices, vol. 56,   no. 10,  pp. 2264-2669, Oct. 2009.

P. Hashemi, L. Gomez, and J.L. Hoyt, “Gate-All-Around N-MOS­FETs with Uniaxial Tensile Strain-Induced Performance Enhance­ment Scalable to Sub-10-nm Na­nowire Diameter,” IEEE Electron Device Letters, Vol. 30, No. 4, pp. 401-403, April 2009.

C.W. Holzwarth, R. Amatya, M. Araghchini, J. Birge, H. Byun, J. Chen, M. Dahlem, N.A. DiLello, F. Gan, J.L. Hoyt, E.P. Ippen, F.X. Kartner, A. Khilo, J. Kim, A. Mota­medi, J.S. Orcutt, M. Park, M. Per­rott, M. Popovic, R.J. Ram, H.I. Smith, G.R. Zhou, S.J. Spector, T. Lyszczarz, M.W. Geis, D.M. Len­non, J.U. Yoon, M. Grein, R.T. Schulein, S. Frolov, A. Hanjani, J. Shmulovich, “High speed analog-to-digital conversion with silicon photonics,” Proceedings of the SPIE v 7220, p 72200B (15 pp.), 2009.

P. Hashemi, L. Gomez, M. Cano­nico, and J.L. Hoyt, “Electron Transport in Gate-All-Around Un­iaxial Tensile Strained-Si Nanowire n-MOSFETs”, IEEE IEDM, Dec., 2008, pp.865-868.

C. Ni Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, and J. L. Hoyt, “Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs,” IEEE Trans. Elec­tron Devices, Volume 55,  Issue 10,  Oct. 2008, pp. 2687 – 2694.

L. Gomez, P. Hashemi, and J.L. Hoyt, “Hole Velocity Enhancement in Sub-100nm Gate Length Strained-SiGe Channel p-MOS­FETs on Insulator,” IEEE SOI Conference, New Paltz, NY, USA, October 2008.

P. Hashemi, M. Canonico, J.K.W. Yang, L. Gomez, K.K. Berggren, and J. L. Hoyt, “Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Na­nowires for Gate-All-Around n-MOSFETs,” ECS (Electrochemical  Society) Transactions, Vol. 16, No. 10, p.p. 57-68, October 2008.

M. Kim, O. Olubuyide, J. Yoon, and J. Hoyt, “Selective Epitaxial Growth of Ge-on-Si for Photodiode Appli­cations,” ECS (Electrochemi­cal  Society) Transactions, Vol. 16, No. 10, pp. 837-847, October 2008.

J.L. Hoyt, P. Hashemi, and L. Go­mez, “Prospects for Top-Down Fabricated Uniaxial Strained Na­nowire MOSFETs, ” in ECS Trans­actions , Vol. 16, No. 10, p.p. 731-734, October 2008.

O.M. Nayfeh, C. Ni Chleirigh, J. Hennessy, L. Gomez, J.L. Hoyt and D.A. Antoniadis, “Design of tunneling field-effect transistors using strained-silicon/strained-germanium type-II staggered hete­rojunctions,” IEEE Electron Device Letters, v 29, n 9, Sept. 2008, p 1074-7.

O.M. Nayfeh, C. Ni Chleirigh, J.L. Hoyt and D.A. Antoniadis, “Mea­surement of enhanced gate-con­trolled band-to-band tunneling in highly strained silicon-germanium diodes,” IEEE Electron Device Letters, v 29, n 5, May 2008, p 468-70.

C. Ni Chleirigh, XiaoRu Wang, G. Rimple, Yun Wang, N.D. Theo­dore, M. Canonico, and J.L. Hoyt, “Super critical thickness SiGe-channel heterostructure p-type metal-oxide-semiconductor field-effect transistors using laser spike annealing,” Journal of Applied Physics, v 103, n 10, 15 May 2008, p 104501-1-4.

P. Hashemi, L. Gomez, M. Cano­nico, and J.L. Hoyt “Performance Enhancement in Uniaxially Tensile Strained-Si Gate-All-Around Na­nowire n-MOSFETs”, presented at IEEE Device Research Confe­rence (DRC 2008), Santa Barbara, CA, USA, p. 185, June 2008.

L. Gomez, M. Canonico, M.K. Kim, P. Hashemi , and J.L. Hoyt, “Fabri­cation of Strained-Si/Strained-Ge Heterostructures on Insulator,” Journal of Electronic Materials, Vol. 37 (3), pp. 240-244, March 2008.