MTL Annual Report

tag » gallium nitride

• GaN Power Electronics

  • Our group is focusing on the development of GaN power transistors grown on Si substrates. Si substrates are preferred to…

• Materials Reliability in GaN-based Devices

  • GaN-based devices, traditionally used for light-emitting diodes, are becoming very attractive for high-power, high-frequency applications for a variety of radar…

• W-band GaN Transistors and their Integration with Si(100) Electronics

  • GaN-based high-electron-mobility transistors (HEMTs) have become one of the prime candidates for solid-state power amplifiers at frequencies above 30 GHz.

• Top-down Fabrication of AlGaN/GaN Nanowires

  • The frequency performance of AlxGa1–xN/GaN high-electron-mobility transistors (HEMTs) has rapidly increased in recent years. Transistors with current gain cut-off frequencies…