Tomás Palacios

  • Title: Emmanuel E. Landsman CD Associate Professor
  • Department: Department of Electrical Engineering and Computer Science

Collaborators

  • D. Antoniadis, MIT
  • J. del Alamo, MIT
  • P. Jarillo-Herrero, MIT
  • D. Jena, University of Notre Dame
  • J. Kong, MIT
  • U. K. Mishra, University of California – Santa Barbara
  • E. Monroy, CEA-Grenoble, France
  • E. Munoz, ETSIT-UPM, Spain
  • D. Perreault, MIT
  • C. Thompson, MIT
  • H. Xing, University of Notre Dame

Visiting Scientists

  • M. Azize, Post Doc, France
  • T. Fujishima, Post Doc, Japan
  • T.Imada, Post Doc, Japan
  • P.Srivastava, Post Doc, Belgium
  • H.-S. Lee, Post Doc, South Korea
  • Z. Liu, Post Doc-SMART, Singapore
  • C.C. Huang, Post Doc-SMART, Singapore
  • E. Matioli, Post Doc, Brazil

Graduate Students

  • F. Gao, Research Assistant
  • S. Ha, Research Assistant
  • A. Hsu, Research Assistant
  • D. S. Lee, Research Assistant
  • S. Joglekar, Research Assistant
  • X. Lin, Research Assistant
  • B. Lu, Research Assistant
  • C. Mackin, Research Assistant
  • B. Mailly, Research Assistant
  • D. Piedra, Research Assistant
  • O. I. Saadat, Research Assistant
  • M. Sun, Research Assistant
  • H. Wang, Research Assistant
  • L. Yu, Research Assistant
  • X. Zhang, Research Assistant
  • Y. Zhang, Research Assistant
  • A. Zubair, Research Assistant

Undergraduate Students

  • R. Luo
  • J.Maswan
  • W.Gaviria
  • P. Nardecchia

Support Staff

  • J. Baylon, Admin Assistant II

Publications

Gao, F., B. Lu, L. Li, S. Kaun, J. S. Speck, C. V. Thompson, and T. Palacios, “Role of Oxygen in the OFF-State Degradation of AlGaN/GaN HEMTs,” Appl. Phys. Letts., vol. 99, pp. 223506, 2012.

K. K. Kim, A. Hsu, X. T. Jia, S. M. Kim, Y. M. Shi, M. Dresselhaus, T. Palacios, and J. Kong, “Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices,” ACS Nano, vol. 6, pp. 8583-8590, 2012.

F. Gao, D. Chen, B. Lu, H. L. Tuller, C. V. Thompson, S. Keller, U. K. Mishra, and T. Palacios, “Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs,” IEEE Electron Dev. Letts., vol. 33, pp. 1378-1380, 2012.

H. Wang, L .Yu, Y. H. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, J. Kong, and T. Palacios, “Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition,” International Electron Device Meeting, San Francisco, December, 2012. (Best paper award)

H. Wang, L. L. Yu, Y. H. Lee, Y. M. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, “Integrated Circuits Based on Bilayer MoS2 Transistors,” Nano Letters, vol. 12, Pp. 4674-4680, 2012.

S. DasGupta, M. Sun, A. Armstrong, R. J. Kaplar, M. J. Marinella, J. B. Stanley, S. Atcitty, and T. Palacios, “Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs,” IEEE Trans. On Elect. Dev., vol. 59, pp. 2115-2122, 2012.

M. Sun, H.-S. Lee, B. Lu, D. Piedra, and T. Palacios, “Comparative Breakdown Analysis of Mesa and Ion Implantation Isolated AlGaN/GaN HEMTs on Si Subtrate,” Appl. Phys. Express, vol. 5, pp. 074202, 2012.

D. S. Lee, O. Laboutin, Y. Cao, W. Johnson, E. Beam, A. Ketterson, M. Schuette, P. Saunier, and T. Palacios, “Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs,” IEEE Electron Dev. Letts., vol. 33, pp. 976-978, 2012.

B. Lu, E. Matioli, and T. Palacios, “Tri-Gate Normally-off GaN Power MISFET,” IEEE Electron Dev. Letts. Vol. 33, pp. 360-362, 2012. (Best paper award)

H. S. Lee, D. Piedra, M. Sun, X. Gao, S. P. Guo, T. Palacios, “3000 V 4.3 cm2 InAlN/GaN MOSHEMTs with AlGaN Back Barrier,” IEEE Electron Dev. Letts., vol. 33, pp. 982-984, 2012.

X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma, “Study of  Gate Oxide Traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors by use of ac transconductance method,” Appl. Phys. Letts., vol. 102, pp. 103504, 2013

A. Hsu, H. Wang, Y. C. Shin, B. Mailly, X. Zhang, L .Yu, Y. Shi, Y. H. Lee, M. Dubey, K. K. Kim, J. Kong, and T. Palacios, “Large-Area 2D Electronics: Materials, Technology, and Devices,” Proceedings of the IEEE, in press (2013). Invited paper.

B. Lu, M. Sun, and T. Palacios, “An Etch-Stop Barrier Structure for GaN High Electron Mobility Transistors,” IEEE Electron Dev. Letts., vol. 34, pp. 369-371, 2013.

S. M. Kim, A. Hsu, P. T. Araujo, Y. H. Lee, T. Palacios, M. Dresselhaus, J. C. Idrobo, K. K. Kim, and J. Kong, “Synthesis of  Patched or Stacked Graphene and hBN Flakes: A Route to Hybrid Structure Discovery,” Nano Letters, vol. 13, pp. 933-941, 2013.

Faculty & Topics