All entries for mildred dresselhaus

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Mildred Dresselhaus

• Title: Institute Professor
• Department: Departments of Physics and Electrical Engineering & Computer Science

Collaborators

• X. Ling, EECS
• A. Liao, RLE
• E. Barros, Visiting Faculty, RLE

Graduate Students

• J. Rodriguez Nieva, RA, Physics
• Y. Lin, RA, EECS
• X. Zhang, RA, EECS
• A. Zubair, RA, EECS
• Y. C. Shin, RA, MSE
• J. Soares, Visiting PhD, RLE
• S. Tang, RA, MSE

Support Staff

• R. Schusky, Administrative Assistant II

Publications

Araujo, P. T., D. L. Mafra, K. Sato, R. Saito, J. Kong, M. S. Dresselhaus. 2012. Phonon self-energy corrections to nonzero wave-vector phonon modes in single-layer graphene. PRL 109(4).

Araujo, P. T., D. L. Mafra, K. Sato, R. Saito, J. Kong, M. S. Dresselhaus. 2012. Unraveling the interlayer-related phonon self-energy renormalization in bilayer graphene. Scientific Reports 2.

Araujo, P. T., M. Terrones, M. S. Dresselhaus. 2012. Defects and impurities in graphene- like materials. Materials Today 15(3):98.

Cruz-Silva, E., X. T. Jia, H. Terrones, B. G. Sumpter, M. Terrones, M. S. Dresselhaus, V. Meunier. 2013. Edge-edge interactions in stacked graphene nanoplatelets. ACS Nano 7(3):2834.

Dresselhaus, M. 2012. Graphene: A journey through carbon nanoscience. MRS Bulletin 37(12):1319.

Dresselhaus, M. S. 2012. Personal reflections on Enrico Fermi. Materials Express 2(2):173.

Hirschmann, T. C., P. T. Araujo, H. Muramatsu, X. Zhang, K. Nielsch, Y. A. Kim, M. S. Dresselhaus. 2013. Characterization of bundled and individual triple-walled carbon nanotubes by resonant Raman spectroscopy. ACS Nano 7(3):2381.

Kalbac, M., J. Kong, M. S. Dresselhaus. 2012. Raman spectroscopy as a tool to address individual graphene layers in few-layer graphene. J. Physical Chemistry C 116(35):19046.

Kalbac, M., J. Kong, L. Kavan, M. S. Dresselhaus. 2012. Raman spectroscopy of isotopically labeled two-layer graphene. Physica Status Solidi B 249(12):2500.

Mafra, D. L., J. Kong, K. Sato, R. Saito, M. S. Dresselhaus, P. T. Araujo. 2012. Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes. Phys. Rev. B 86(19).

Mafra, D. L., J. Kong, K. Sato, R. Saito, M. S. Dresselhaus, P. T. Araujo. 2012. Using the G′ Raman cross-section to understand the phonon dynamics in bilayer graphene systems. Nano Letters 12(6):2883.

Pan, M. H., E. C. Girao, X. T. Jia, S. Bhaviripudi, Q. Li, J. Kong, V. Meunier, M. S. Dresselhaus. 2012. Topographic and spectroscopic characterization of electronic edge states in CVD grown graphene nanoribbons. Nano Letters 12(4):1928.

Rodriguez-Nieva, J. F., R. Saito, S. D. Costa, M. S. Dresselhaus. 2012. Effect of C-13 isotope doping on the optical phonon modes in graphene: Localization and Raman spectroscopy. Phys. Rev. B 85(24).

Rogacheva, E. I., D. S. Orlova, O. N. Nashchekina, M. S. Dresselhaus, S. Tang. 2012. Thickness dependence oscillations of transport properties in thin films of a topological insulator Bi₉₁Sb₉. Appl. Phys. Lett. 101(2).

Sato, K., R. Saito, C. X. Cong, T. Yu, M. S. Dresselhaus. 2012. Zone folding effect in Raman G-band intensity of twisted bilayer graphene. Phys. Rev. B 86(12).

Soni, A., Y. Q. Shen, M. Yin, Y. Y. Zhao, L. G. Yu, X. Hu, Z. L. Dong, K. A. Khor, M. S. Dresselhaus, Q. H. Xiong. 2012. Interface driven energy filtering of thermoelectric power in spark plasma sintered Bi₂Te_2.7Se_0.3 nanoplatelet composites. Nano Letters 12(8):4305.

Tang, S., M. S. Dresselhaus. 2012. Constructing a large variety of Dirac-cone materials in the Bi_1-xSb_x thin film system. Nanoscale 4 (24):7786.

Tang, S., M. S. Dresselhaus. 2012. Constructing anisotropic single-Dirac-cones in Bi_1-xSb_x thin films. Nano Letters 12(4):2021.

Tang, S., M. S. Dresselhaus. 2012. Phase diagrams of Bi_1-xSb_x thin films with different growth orientations. Phys. Rev. B 86(7).

Terrones, H., R. T. Lv, M. Terrones, M. S. Dresselhaus. 2012. The role of defects and doping in 2D graphene sheets. Rep. Progr. Phys. 75(6).

Xu, W. G., X. Ling, J. Q. Xiao, M. S. Dresselhaus, J. Kong, H. X. Xu, Z. F. Liu, J. Zhang. 2012. Surface enhanced Raman spectroscopy on a flat graphene surface. PNAS 109(24):9281.

Yu, B., M. Zebarjadi, H. Wang, K. Lukas, H. Z. Wang, D. Z. Wang, C. Opeil, M. Dresselhaus, G. Chen, Z. F. Ren. 2012. Enhancement of thermoelectric properties by modulation-doping in silicon germanium alloy nanocomposites. Nano Letters 12(4):2077.

Zebarjadi, M., B. L. Liao, K. Esfarjani, M. Dresselhaus, G. Chen. 2013. Enhancing the thermoelectric power factor by using invisible dopants. Adv. Mat. 25 (11):1577.

Zhao, Y. Y., X. Luo, H. Li, J. Zhang, P. T. Araujo, C. K. Gan, J. Wu, H. Zhang, S. Y. Quek, M. S. Dresselhaus, Q. H. Xiong. 2013. Inter layer breathing and shear modes in few-trilayer MoS₂ and WSe₂. Nano Letters 13(3):1007.

Electronic Transport Studies of Thin Film Bi and Bi1-xSbx

• Sponsorship: AFOSR MURI
• Authors: A. D. Liao, M. S. Dresselhaus

Currently bulk Bi and Bi_xSb_1-x­ have the best known thermoelectric (TE) properties at cryogenic temperatures. These properties can be further improved in thin films through quantum confinement effects^[1]. The crystal orientation of the thin film is expected to impact the transport properties in Bi and Bi_xSb_1-x­ since they are known to be anisotropic. Previous theoretical calculations have suggested that the electronic structure of thin films of Bi_xSb_1-x­ with low Sb concentration may possess Dirac cones, similar to graphene, when grown in certain low symmetry directions^[2]. Unlike graphene, the Dirac cones in Bi_xSb_1-x­ can have an asymmetric slope depending on the crystal orientation, causing the Fermi velocity to be asymmetric as well^[3]. Further control of the crystal orientation is also predicted to open a band gap, changing the material from a semi-metal to semiconductor, which is useful for TE applications.

Clearly, the crystal orientation of Bi and Bi_xSb_1-x has a strong impact on the electronic structure and transport properties. By depositing thin films of Bi or Bi_xSb_1-x on different substrates, we can control the grain texture and orientation of the film. On substrates (e.g., mica, sapphire, BaF₂) that are well lattice-matched to Bi, grains are almost all oriented along the trigonal axis out of plane from the film. On substrates that are poorly lattice-matched (e.g., SiO₂) or where Bi wets poorly to the surface (e.g., graphene), each grain is randomly oriented. We fabricate van der Pauw devices from thin films of various thicknesses and substrates to quantify the contributions from different grain crystal orientations. Both the single contribution from each grain and the collective behavior of many grains are investigated. Devices are also gated to electrostatically dope the films and investigate the presence of the predicted Dirac cones.

1. L. D. Hicks and M.S. Dresselhaus, “Effect of quantum-well structures on the thermoelectric figure of merit,” Physical Review B, vol. 47, pp. 12727-12731, May 1993. [↩]
2. S. Tang and M.S. Dresselhaus, “Constructing anisotropic single-Dirac-cones in Bi_1-xSb_x thin films,” Nano Letters vol. 9, p. 2021, Mar. 2012. [↩]
3. S. Tang and M. S. Dresselhaus, “Phase diagrams of Bi_1-xSb_x thin films with different growth orientations,” Physical Review B, vol. 86, p. 075436, Aug. 2012. [↩]