MTL Annual Research Report 2013

Judy L. Hoyt

• Title: Professor
• Department: Department of Electrical Engineering and Computer Science

Collaborators

• Dimitri Antoniadis, EECS
• Eugene Fitzgerald, DMSE
• Pouya Hashemi, IBM
• Ammar Nayfeh, Masdar Institute
• Eli Yablonovitch, UC Berkeley
• Maggie Xia, UBC

Graduate Students

• Winston Chern, EECS
• Eva Polyzoeva, EECS
• Jamie Teherani, EECS (co-super­vised with Prof. Dimitri Antoniadis)
• Tao Yu, EECS
• underGraduate sTUDENTS
• Chen Dan Dong, EECS

Research Staff

• Gary Riggott, Research Specialist

Support Staff

• Loriann McCormick, Administrative Assistant II

Publications

J. T. Teherani, S. Agarwal, E. Ya­blonovitch, J. L. Hoyt, and D. A. Antoniadis, “Impact of Quantization Energy and Gate Leakage in Bi­layer Tunneling Transistors,” IEEE Electron Device Letters, vol. 34, no. 2, pp. 298 –300, Feb. 2013.

W. Chern, P. Hashemi, J.T. Tehe­rani, T. Yu, Y. Dong, G. Xia, D.A. Antoniadis, and J.L. Hoyt, “High Mobility High-κ-All-Around Asym­metrically-Strained Germanium Nanowire Trigate p-MOSFETs”, in IEDM Tech. Dig., 2012, pp. 387-390.

N.A. DiLello, D.K. Johnstone, and J.L. Hoyt, “Characterization of dark current in Ge-on-Si photodiodes,” Journal of Applied Physics, v 112, n 5, p 054506, Sept. 2012.

S.A. Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J.L.Hoyt, “Thin film a-Si/c-Si1-xGex/c-Si heterojunction solar cells with Ge content up to 56%,”  2012 IEEE 38th Photovol­taic Specialists Conference (PVSC), p 000005-8, 2012.

J.T. Teherani, W. Chern, D.A. An­toniadis, J.L. Hoyt, L. Ruiz, C.D. Poweleit, and J. Menendez, “Ex­traction of large valence-band en­ergy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostruc­tures on relaxed SiGe substrates,” Physical Review B (Condensed Matter and Materials Physics), v 85, n 20, p 205308, 15 May 2012.

S.A. Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J.L. Hoyt, “Effect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells”,  MRS Proceedings, Volume 1447, 2012.

P. Hashemi and J.L. Hoyt, “High Hole-Mobility Strained-Ge/Si0.6 Ge0.4 P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness,” IEEE Electron Device Letters, v 33, n 2, p 173-5, Feb. 2012.

S.A. Hadi, A. Nayfeh, P. Hashemi, and J.L. Hoyt, “a-Si/c-Si1-xGex/c-Si heterojunction solar cells,” in International Conference on Sim­ulation of Semiconductor Pro­cesses and Devices, SISPAD, pp. 191-194, 2011.

S.A. Hadi, P. Hashemi, A. Nayfeh, and J.L. Hoyt, “Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements,” ECS (Electro­chemical Society) Transactions, Vol. 41 (4), pp. 3-14, 2011.

S. Paydavosi, K. Aidala, P. Brown, P. Hashemi, G. J. Supran, J. L. Hoyt, and V. Bulovic, “High-Den­sity Charge Storage on Molecular Thin Films- Candidate Materials for High Storage Capacity Memory Cells,” IEEE International Electron Device Meeting (IEDM ’11), Washington DC, USA, December 2011.

(Invited) J. Hoyt, P. Hashemi, and W. Chern, “Strained Nanowire MOSFETs,” invited talk presented at the 220th Electrochemical Soci­ety (ECS), Session E9-ULSI Pro­cess Integration, Boston, Massa­chusetts, USA, October 2011.

(Invited) Pouya Hashemi, H.-S. Lee, M. A. Bhuiyan, D. A. Antoni­adis, and J. L. Hoyt,  “High Mobility Strained Ge Channels and Gate Dielectrics for Planar and Non-Planar p-MOSFETs,” Mat. Res. Soc. Meeting, San Francisco, April 27, 2011.

N. A. DiLello and J.L. Hoyt, “Im­pact of post-metallization anneal­ing on Ge-on-Si photodiodes pas­sivated with silicon dioxide,” Appl. Phys. Lett. 99, 033508 (2011).

Khilo, A; Spector, S.J.; Grein, M.E.; Nejadmalayeri, A.H.; Holzwarth, C.W.; Sander, M.Y.; Dahlem, M.S.; Peng, M.Y.; Geis, M.W.; DiLello, N.A.; Yoon, J.U.; Motamedi, A.; Orcutt, J.S.; Wang, J.P.; Sorace-Agaskar, C.M.; Popo­vic, M.A.; Jie Sun; Gui-Rong Zhou; Hyunil Byun; Jian Chen; Hoyt, J.L.; Smith, H.I.; Ram, R.J.; Perrott, M.; Lyszczarz, T.M.; Ippen, E.P.; Kart­ner, F.X, “Photonic ADC: over­coming the bottleneck of electronic jitter”, Optics Express, v 20, n 4, p 4454-69, 21 Nov. 2011.

P. Hashemi, J.T. Teherani, and J.L. Hoyt, “Investigation of Hole Mobility in Gate-All-Around Si Nanowire p-MOSFETs with High-k/Metal-Gate: Effects of Hydrogen Thermal Annealing and Nanowire Shape,” International Electron De­vice Meeting (IEDM 2010), San Francisco, USA, Session 34.5 De­cember 2010.

M. Kim, P. Hashemi, and J.L. Hoyt, “Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth,” Appl. Phys. Lett., 97, 262106 (2010).