Jesús A. del Alamo

  • Title: Donner Professor, MacVicar Faculty Fellow
  • Department: Department of Electrical Engineering and Computer Science (EECS)

Collaborators

  • L.J. Brillson, Ohio State University
  • J. Jimenez, Triquint Semiconductor
  • D.H. Kim, Teledyne
  • T.-W. Kim, Global Foundries
  • B. R. Bennett, NRL

Postdoctoral Associates

  • A. Vardy, MIT-Technion Fellow

Graduate Students

  • A. Guo, NDSEG Fellowship
  • L. Guo, NSF Fellow
  • D.H. Jin, Samsung Fellow
  • J. Lin, RA EECS
  • W. Lu, RA EECS
  • S. Warnock, RA EECS
  • Y. Wu, RA EECS
  • X. Zhao, RA, DMSE

Support Staff

  • E. Kubicki, Administrative Assistant II

Publications

del Alamo, J. A., “Recent progress in understanding the DC and RF reliability of GaN high-electron mobility transistors.” Invited talk at Materials Research Society Spring Meeting, April 9-13, 2012.

Lin, J., T.-W. Kim, D. A. Antoniadis and J. A. del Alamo, “A Self-Aligned InGaAs Quantum-Well MOSFET Fabricated through a Lift-off Free Front-end Process.” Applied Physics Express, Vol. 5, p. 064002, May 16, 2012.

Jin, D. and J. A. del Alamo, “Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs.” 24th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), June 3-7, 2012, pp. 333-346.

Kim, T.-W., R. J. W. Hill, C. D. Young, D. Veksler, J. Oh, C. Y. Kang, D.-H. Kim, J. A. del Alamo, C. Hobbs, P. Kirsch and R. Jammy, “InAs Quantum-Well MOSFET (Lg=100 nm) with Record High gm, fT and fmax.” 2012 Symposium on VLSI Technology, June 12-15, 2012, pp. 179-180.

del Alamo, J. A. and D.-H. Kim, “InAs High-Electron Mobility Transistors on the Path to THz Operation.” Invited paper at International Conference on Solid State Devices and Materials (SSDM), September 25-27, 2012.

del Alamo, J. A., “Nanometer-Scale III-V CMOS.” Short Course on the Future of Semiconductor Devices and Integrated Circuits at 34th IEEE Compound Semiconductor IC Symposium (CSICS), October 14, 2012.

Lin, C.-H., T. A. Merz, D. R. Doutt, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, ”Strain and temperature dependence of defect formation at AlGaN/GaN high electron mobility transistors on a nanometer scale.” IEEE Transactions on Electron Devices, Vol. 59, No. 10, pp. 2667-2674, October 2012.

Lin, J., D. A. Antoniadis, and J. A. del Alamo, “Sub-30 nm In As Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO2 Insulator.” IEEE International Electron Devices Meeting, December 10-12, 2012, pp. 757-760.

Kim, T.-W. , R. J. W. Hill, D. Kim, D.-H. Koh, R. Lee, M. H Wong, T. Cunningham, J. A. del Alamo, S. K. Banerjee, S. Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G. Nakamura, Q. Li, K. M. Lau, C. Hobbs, P. D. Kirsch and R. Jammy, “ETW-QW InAs MOSFETs with Scaled Body for Improved Electrostatics.” IEEE International Electron Devices Meeting, CA, December 10-12, 2012, pp. 765-768.

Jin, D. and J. A. del Alamo, ”Impact of high-power stress on dynamic ON resistance of high-voltage GaN HEMTs.” Microelectronics Reliability, Vol. 52, pp. 2875-2879 (2012).

Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou, C. King, E. Regan, M. Urteaga, B. Brar, and T.-W. Kim, ”Lg=60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator.” Applied Physics Letters, Vol. 101, p. 223507, 2012.

Kim, D.-H., T.-W. Kim, R. J. W. Hill, C. D. Young, C. Y. Kang, C. Hobbs, P. Kirsch, J. A. del Alamo, and R. Jammy, ”High-Speed E-Mode InAs QW MOSFET with Al2O3 Insulator for Future RF Applications.” IEEE Electron Device Letters, Vol. 34, No. 2, pp. 196-198, February 2013.

del Alamo, J. A. , “THz III-V HEMT Technology.” Short Course on THz Transistors and Packaging Integration Technologies, International Wireless Symposium, April 14-18, 2013.

Guo, A. and J. A. del Alamo, “Mo/n+-InGaAs Nanocontacts for Future III-V MOSFETs.” To be presented at 25th International Conference on Indium Phosphide and Related Materials, May 19-23, 2013.

Faculty & Topics