Dimitri A. Antoniadis

  • Title: Ray and Maria Stata Professor of Electrical Engineering
  • Department: Department of Electrical Engineering and Computer Science

Collaborators

  • T. Equi, FCRP Materials, Structures, and Devices Focus Center, Executive Director
  • L. Wei, Post-Doctoral Fellow
  • S. Rakheja, Post-Doctoral Fellow

Graduate Students

  • J. Teherani, Res. Asst., EECS
  • J. Lin, Res. Asst., EECS
  • U. Radhakrishna, Res. Asst., EECS

Support Staff

  • L. McCormick, Admin. Asst. II

Publications

Kim, D.-H.; del Alamo, J. A.; Antoniadis, D. A.; Li, J.; Kuo, J.-M.; Pinsukanjana, P.; Kao, Y.-C.; Chen, P.; Papavasiliou, A.; King, C.; Regan, E.; Urteaga, M.; Brar, B.; Kim, T.-W. “Lg=60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator”, Applied Phys. Lett., pp. 223507 – 223507-4, 2012.

Teherani, J.T., S. Agarwal, E. Yablonovitch, J. L. Hoyt, and D. A. Antoniadis, ” Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors”, IEEE Electron Dev. Lett., Vol. 34, pp. 298-300,  2013.

Luo, J., L. Wei, C.-S. Lee, A. D. Franklin, X. Guan, E. Pop, D. A. Antoniadis, and H.-P. Wong, ” Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length,” IEEE Transaction Electr. Dev.  2013.

Xiao Gong, Genquan Han ; Fan Bai ; Shaojian Su ; Pengfei Guo ; Yue Yang ; Ran Cheng ; Dongliang Zhang ; Guangze Zhang ; Chunlai Xue ; Buwen Cheng ; Jisheng Pan ; Zheng Zhang ; Eng Soon Tok ; Antoniadis, D. ; Yee-Chia Yeo, ” Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 oC Si2H6 Passivation”,  IEEE Electron Dev. Lett., Vol. 34, pp. 339-341,  2013.

A. Majumdar, and D. A. Antoniadis, “Possible Observation of Ballistic Contact Resistance in Wide Silicon MOSFETs “, 70th IEEE Device Research Conference, pp. 197-198, June 2012.

U. Radhakrishna, L. Wei, D.-S. Lee, T. Palacios and D. A.  Antoniadis, “Physics-based GaN HEMT Transport and Charge Model: Experimental Verification and Performance Projection”, Proc. International Electron Devices Meeting (IEDM), pp. 319-322, 2012.

W. Chern, P. Hashemi, J. T. Teherani, T. Yu, Y. Dong, G. Xia, D. A. Antoniadis and J. L. Hoyt, “High Mobility High-κ-All-Around Asymmetrically-Strained Germanium Nanowire Trigate p-MOSFETs”, Proc. International Electron Devices Meeting (IEDM), pp. 387-390, 2012.

J. Lin, D. A. Antoniadis, and J. A. del Alamo, “Sub-30 nm InAs Quantum-Well MOSFETs with Self-aligned Metal Contacts and Sub-1 nm EOT HfO2 Insulator”, Proc. International Electron Devices Meeting (IEDM), pp. 357-360, 2012.

A. Majumdar,  S. Bangsaruntip, G. M. Cohen, L. M. Gignac, M. Guillorn, M. M. Frank, J. W. Sleight and D. A. Antoniadis, “Room-Temperature Carrier Transport in High Performance Short-Channel Silicon Nanowire MOSFETs”, Proc. International Electron Devices Meeting (IEDM), pp. 179-182, 2012.

L. Yu, O. Mysore, L. Wei, L. Daniel, D. A. Antoniadis, I. Elfadel and D. Boning, “An Ultra-Compact Virtual Source FET Model for Deeply-Scaled Devices: Parameter Extraction and Validation for Standard Cell Libraries and Digital Circuits”, ASP-DAC 2013.

Yu, L., L. Wei, D. A. Antoniadis, E. Ibrahim, and D. Boning, “Statistical Modeling wit the Virtual Source MOSFET Model,” Proceedings of Design, Automation & Test in Europe Conferenc and Exhibition (DATE), pp. 1454-1457, 2013.

Faculty & Topics