Figure 1: a) The C-V characteristic of devices with PTCBI/C60 and without organic layer, and b) energy-band diagram and chemical…
Figure 1: Measured transfer characteristics of ~15nm diameter gate-all-around nanowire p-MOSFETs with N=500 parallel nanowires and Al2O3/WN gate stack, demonstrating…
Multi-gate semiconductor nanowires (NWs) have recently drawn significant attention as potential channel structures in high-performance metal-oxide-semiconductor field-effect-transistors (MOSFETs) due to…