MTL Annual Report

Collaborators

• F. Calle, ETSIT-UPM, Spain
• J. del Alamo, MIT
• P. Jarillo-Herrero, MIT
• D. Jena, University of Notre Dame
• J. Kong, MIT
• U. K. Mishra, University of California – Santa Barbara
• E. Monroy, CEA-Grenoble, France
• E. Munoz, ETSIT-UPM, Spain
• D. Perreault, MIT
• H. Xing, University of Notre Dame

Visiting Scientist

• M. Azize, Post Doc, France

Postdoctoral Associates

• M. Azize
• H. S. Lee
• K. Ryu

Graduate Students

• J. W. Chung, Research Assistant
• F. Gao, Research Assistant
• A. Hsu, Research Assistant
• D. S. Lee, Research Assistant
• B. Lu, Research Assistant
• B. Mailly, Research Assistant
• D. Piedra, Research Assistant
• O. I. Saadat, Research Assistant
• H. Wang, Research Assistant

Undergraduate Students

• M. Medlock

Support Staff

• E. Kubicki, Admin. Assistant II

Publications

Wang, H., D. Nezich, J. Kong, and T. Palacios: “Graphene Frequency Multipliers,” Electron Dev. Letts., vol. 30, 547-549, 2009.

Chung, J.W., Edwin L. Piner, and T. Palacios, “N-face GaN/AlGaN HEMTs Fabricated through Layer Transfer Technology”, Electron Dev. Letters 30, 113-116, 2009.

Chung, J. W., Lee, J.-K., Piner, E. L., and T. Palacios, “Seamless On-Wafer Integration of Si (100) MOSFETs and GaN HEMTs,” Electron Dev. Letts., vol. 30, 1015-1017, 2009.

Palacios, T., “Beyond the AlGaN/GaN HEMT: New Concepts for High-Speed Transistors,” Phys. Stat. Sol. (a), vol. 206, 1145, 2009. (Invited).

Palacios, T., J.W. Chung, O. Saadat, and F. Mieville: “GaN and Digital Electronics: A Way out of Moore’s Law?” Phys. Stat. Sol. (c), vol. 6, 136, 2009. (Invited)

Chung, J. W., Saadat, O. I., Guo, S., and T. Palacios, “Gate-Recessed InAlN/GaN HEMTs on SiC Substrate with Al2O3 Passivation,” Electron Dev. Letts., vol. 30, 904-906, 2009.

Saadat, O. I., Chung, J. W., Piner, E., and T. Palacios, “Gate-First AlGaN/GaN HEMT Technology for High Frequency Applications,” Electron Dev. Letts., vol. 30, 1254-1256, 2009.

Chung, J. W., and T. Palacios: “Heterogeneous Integration of Nitride and Si Electronics,” Meeting of the American Physical Society, Pittsburg PA, p. 102, 16-20 March 2009. (Invited)

Palacios, T.: “GaN and Si on-wafer Integration: The Future of High Frequency and High Power Electronics?” Connecticut Symposium on Microelectronics & Optoelectronics, New Haven, CT, pp. 2a-2b, March 2009. (Invited)

Palacios, T.: “New Applications for Graphene Electronics,” The 6th US-Korea Nanoforum (Nanoelectronics and Its Integration with Applications), Las Vegas, NV, pp. 80-81, 28-29 April 2009. (Invited)

Chung, J. W., O. I. Saadat, H. Wang, and T. Palacios, “GaN Transistors: Redefining the Limits of Electronics,” 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Malaga, Spain, pp. 2-6, 17-20 May 2009. (Invited)

Wang, H., J. Wu, A. Hsu, D. Nezich, and T. Palacios, “Graphene RF Electronics,” IEEE International Microwave Symposium (IMS). Boston, MA, 1 page, June 2009. (Invited)

Palacios, T., “The Challenges and Rewards of Industry/University Collaborative Research,” IEEE International Microwave Symposium (IMS). Boston, MA, 1 page, June 2009. (Invited)

Palacios, T., J. W. Chung, and B. Lu, “On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si,” IEEE International Microwave Symposium (IMS). Boston, MA, 3 pages, June 2009. (Invited)

Wang, H, J. W. Chung, X. Gao, S. Guo, and T. Palacios, “Al2O3 Passivated Thin Barrier InAlN/GaN HEMTs on SiC Substrate with Record Current Density and Transconductance,” International Symposium on Compound Semiconductors (ISCS), Santa Barbara, CA, 2 pages, August 30 – September 2, 2009. (Invited).

Chung, J. W., O. I. Saadat, H. Wang, and T. Palacios “Sub-mm wave applications of GaN Transistors,” Compound Semiconductor Integrated Circuit Symposium (CSICS), Greensboro, NC, 4 pages, 11-14 October 2009. (Invited)

Lu, B., and T. Palacios, “Schottky-Drain Technology for High Breakdown Voltage AlGaN/GaN HEMTs on Si Substrate,” Int’l Conference on Nitride Semiconductors, Jeju, South Korea, 2 pages, 18-23, 2009.

Chung, J. W., O. Saadat, and T. Palacios, “Gate-recessed AlGaN/GaN HEMT with a Record fmax of 300 GHz,” Int’l Conference on Nitride Semiconductors, Jeju Island, South Korea, 2 pages, 18-23 October 2009.