MTL Annual Report

Collaborators

• R. Chau, Intel
• K. Hayashi, Mitsubishi Electric
• J. Jimenez, Triquint Semicon.
• Y. Knafo, Gal El
• A. Valdes, IBM

Postdoctoral fellow

• J. Joh
• T. W. Kim

Graduate Students

• U. Gogineni, Research Assistant, EECS
• D.H. Jin, Research Assistant, EECS
• L. Xia, Research Assistant, EECS
• S. Demirtas, Research Assistant, EECS

Support Staff

• E. Kubicki, Administrative Assistant II

Publications

Hisaka, T., H. Sasaki, Y. Nogami, K. Hosogi, N. Yoshida, A. A. Villanueva, J. A. del Alamo, S. Hasegawa, and H. Asahi, “Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions,”  Microelectronics Reliability, Vol. 49, Issue 12, pp. 1515-1519, December 2009.

Kharche, N., G. Klimeck, D.-H. Kim, J. A. del Alamo and M. Luisier, “Performance Analysis of Ultra-Scaled InAs HEMTs,” 2009 IEEE International Electron Devices Meeting.

Kim, T.-W., D.-H. Kim, and J. A. del Alamo, “30 nm In 0.7 Ga 0.3 As Inverted-Type HEMTs with Reduced Gate Leakage Current for Logic Applications,” 2009 IEEE International Electron Devices Meeting.

Jin, D., D.-H. Kim, T.-W. Kim and J. A. del Alamo, “Quantum Capacitance in Scaled Down III-V FETs,” 2009 IEEE International Electron Devices Meeting.

Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, and B. Brar, “Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs,” 2009 IEEE International Electron Devices Meeting.

Xia, L. and J. A. del Alamo, “Impact of <110> Uniaxial Strain on N-Channel In 0.15 Ga 0.85 As High Electron Mobility Transistors,” Applied Physics Letters, Vol. 95, p. 243504, 2009.

Joh, J., J. A. del Alamo, U. Chowdhury, H.-Q. Tserng and J. Jimenez, “Measurement of Channel Temperature in GaN High Electron Mobility Transistors,” IEEE Transactions on Electron Devices, Vol. 56, No. 12, pp. 2895-2901, December 2009.

Lin, C.-H., T. A. Merz, D. R. Doutt, M. J. Hetzer, J. Joh, J. A. del Alamo, U.K. Mishra, and L. J. Brillson, “Nanoscale Mapping of Temperature and Defect Evolution Inside Operating AlGaN/GaN High Electron Mobility Transistors,”Applied Physics Letters, Vol. 95, p. 033510, 2009.

Joh, J. and J. A. del Alamo, “Trapping vs. Permanent Degradation in GaN High Electron Mobility Transistors,” 8th International Conference on Nitride Semiconductors (ICNS-8).

Demirtas, S and J. A. del Alamo, “Critical voltage for electrical reliability of GaN High Electron Mobility Transistors on Si Substrate,” Reliability of Compound Semiconductors Workshop 2009.

Joh, J., F. Gao, T. Palacios and J. A. del Alamo, “A model for the critical voltage for electrical degradation of GaN high electron mobility transistors,” Reliability of Compound Semiconductors Workshop 2009.

del Alamo, J. A. and J. Joh, “GaN HEMT Reliability,” Invited talk at 20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2009. Also Microelectronics Reliability, vol. 49, pp. 1200-1206, 2009.

del Alamo, J. A. and D.-H. Kim, “III-V’s: From THz HEMTs to CMOS,” Plenary Invited talk at 2009 Topical Workshop on Heterostructure Microelectronics.

Lin,  C.-H, T. A. Merz, D. R. Doutt, M. J. Hetzer, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, “Nanoscale Temperature Distribution, Defect Mapping and Evolution Inside Active AlGaN/GaN High Electron Mobility Transistors,” 51st Electronics Materials Conference.

Gogineni, U., H. Hongmei, S. Sweeney, J. Wang, B. Jagannathan, and J. A. del Alamo, “Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices,” 2009 IEEE Radio Frequency Integrated Circuit Symposium.

del Alamo, J. A., J. Joh, and A. A. Villanueva, “Electrical, thermal and environmental reliability of transistors: experimental techniques to identify fundamental degradation mechanisms,” Workshop on Reliability and Manufacturing, (CS-MANTECH).

Kim, D.-H. and J. A. del Alamo, “Scalability of sub-100 nm thin-channel InAs PHEMTs,” 2009 International Conference on Indium Phosphide and Related Materials.