MTL Annual Report

Collaborators

• T. Equi, FCRP Materials, Structures, and Devices Focus Center, Executive Director
• Chang-Hyun Lee, Visiting Scientists, Samsung Semiconductor

Postdoctoral Associate

• O. Nayfeh, Post Doctoral Fellow

Graduate Students

• J. Hennessy, Res. Asst., EECS
• J. Teherani, Res. Asst., EECS
• J. Lin, Res. Asst., EECS

Support Staff

• W. Rokui, Admin. Asst. II

Publications

Y.Q. Wu, O. Koybasi, P.D. Ye, and D. A. Antoniadis; “On-state and Off-state Characterization of Deep- submicron High-k/In_0.75Ga_0.25As NMOSFETs,” 67^th IEEE Device Reserch Conference, June 2009.

J. Hennessy, and D. A. Antoniadis; “High Electron Mobility Germanium MOSFETs: Effect of n-type Channel Implants and Ozone Surface Passivation,” 67^th IEEE Device Reserch Conference, June 2009.

Lan Wei, Frédéric Boeuf, Dimitri Antoniadis, Thomas Skotnicki, H.-S. Philip Wong; “Exploration of Device Design Space to Meet Circuit Speed Targeting 22nm and Beyond,” SSDM, 2009.

A. Khakifirooz,  O. M. Nayfeh,  and D. A. Antoniadis; “A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters,” IEEE Trans. Elec. Dev., Vol 56, pp 1674-1680, 2009.

O. M. Nayfeh, D. A. Antoniadis, K. Mantey, and H. Nayfeh; “Uniform delivery of silicon nanoparticles on  device quality substrates using spin coating from isopropyl alcohol colloids,” Appl. Phys. Lett., Vol. 94, pp 043112-3, 2009.

O. M. Nayfeh, J. L. Hoyt, and D. A. Antoniadis; “Strained- Si_(1-x)Ge_x /Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior,”  IEEE Trans. Elec. Dev., Vol. 56,  pp. 2264 – 2269, 2009.

C. Jeong, D. A. Antoniadis, and M. S. Lundstrom,; “On Backscattering and Mobility in Nanoscale Silicon  MOSFETs,” IEEE Trans. Elec. Dev., Vol. 56,  pp. 2762 – 2769, 2009.

D. A. Antoniadis, “Nanoelectronics chanllenges for the 21st century,” Design Automation and Test in Europe Conference and  Exhibition (DATE) 2010, pp 1487-1487

P. Hashemi, M-K Kim, J. Hennessy, L. Gomez, D. A. Antoniadis, and J. L. Hoyt; “Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors,”  Appl. Phys. Lett., Vol. 96, pp 063109-3, 2010.

D. -H. Kim, J. A. del Alamo, D. A. Antoniadis, and B. Brar; “Extraction of virtual-source Injection velocity in sub-100 nm III-V HFETs,” 2009 International Electron Devices Meeting (IEDM), 2009.

C- W. Cheng, J. Hennessy, D. A. Antoniadis, and E. A. Fitzgerald; “Self-cleaning and surface recovery with arsine pretreatment in ex-situ atomic-layer-deposition of Al₂O₃ on GaAs,” Appl. Phys. Lett., Vol. 95, pp 082106-3, 2009.