Publications
1997
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RC-70. Somerville, M. H., R. Blanchard, J. A. del Alamo, K. G. Duh and P. C. Chao, "On-State Breakdown in High-Power HEMTs: Measurements and Modeling", 1997 International Electron Devices Meeting, Washington, DC, December 1997, pp. 553-556.
RC-69. Ernst, A. N., M. H. Somerville, and J. A. del Alamo, "Dynamics of the Kink Effect in InAlAs/InGaAs HEMTs", Ninth International Conference on Indium Phosphide and Related Materials, Hyannis, MA, May 1997, pp. 353-356.
RC-68. Putnam, C. S., M. H. Somerville, J. A. del Alamo, P. C. Chao and K. G. Duh, "Temperature Dependence of Breakdown Voltage in InAlAs/InGaAs HEMTs: Theory and Experiments", Ninth International Conference on Indium Phosphide and Related Materials, Hyannis, MA, May 1997, pp. 197-200.
RJ-77. Ernst, A., M. H. Somerville and J. A. del Alamo, "Dynamics of the Kink Effect in InA1As/InGaAs HEMTs", IEEE Electron Device Letters 18 (12), 613-615, 1997.
1996
RC-67. Somerville, M. H., and J. A. del Alamo "A Model for Tunneling-Limited Breakdown in High-Power HEMTs", 1996 International Electron Devices Meeting, San Francisco, CA, December 1996, pp. 35-38.
RJ-73. Greenberg, D.R. and J. A. del Alamo, "Nonlinear Source and Drain Resistance in Recessed-Gate Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices 43 (8), 1304-1306, August 1996.
RJ-76. Hu, Q., S. Verghese, R. A. Wyss, Th. Schapers, J. A. del Alamo, S. Feng, K. Yakubo, M. J. Rooks, M. R. Melloch and A. Forster, "High-frequency (f ~ 1 Thz) Studies of Quantum-effect Devices", Semiconductor Science and Technology 11, 1888-1894, 1996.
RJ-75. Somerville, M. H., J. A. del Alamo and W. Hoke, "Direct Correlation Between Impact and the Kink Effect in InA1As/InGaAs HEMTs", IEEE Electron Device Letters 17 (10), 473-475, October 1996.
RJ-74. Sinn, M. T., J. A. del Alamo, B. R. Bennett, K Haberman and F. G. Celii, "Characterization of Surface Roughness Anisotrophy on Mismatched InA1As/InP Heterostructures", Journal of Electronic Materials 25 (2), 313-319, 1996.
RC-66. Somerville, M. H., J. A. del Alamo and P. Saunier, "Off-State Breakdown in Power pHEMTs: The Impact of the Source", 54th Device Research Conference, Santa Barbara, CA, June 1996.
1995
RC-65. Somerville, M. H., J. A. del Alamo and W. Hoke, "A New Physical Model for the Kink Effect on InAlAs/InGaAs HEMTs", 1995 International Electron Devices Meeting, Washington DC, December 1995, pp. 201-204.
RC-64. Hu, Q., S. Vergese, R. A. Wyss, Th. Schapers, J. A. del Alamo, S. Feng, K. Kubo, M. J. Rooks, M. R. Melloch and A. Forster, "High-frequency (f ~ 1 Thz) Studies of Quantum-effect Devices", (invited) 1995 International Electron Devices Research Symposium, Charlottesville, VA, December 1995, pp. 337-341.
RJ-72. Burstein, L., Y. Shapira, B.R. Bennett, and J. A. del Alamo, "Surface Photovoltage Spectroscopy of InxAl1-xAs Epilayers", Journal of Applied Physics 78 (12), 7163-7169, December 1995.
RC-63. del Alamo, J. A., C.C. Eugster, Q. Hu, M.R. Melloch, and M.J. Rooks, "Electron Waveguide Devices", invited paper to 8th International Conference on Superlattices, Microstructures, and Microdevices, Cincinnati, OH, August 1995; Superlattices and Microstructures 23 (1), 121-137, 1998.
RJ-71. Greenberg, D.R., J. A. del Alamo, and R. Bhat, "Impact Ionization and Transport in the InAlAs/n+-InP HFET", IEEE Transactions on Electron Devices 42 (9), 1574-1582, September 1995.
RC-62. del Alamo, J. A. and C.C. Eugster, "Dual Electron Waveguide Devices: the Quest for Electron Directional Coupling", (invited) International Workshop on Mesoscopic Physics and Electronics, Tokyo, Japan, March 1995; Japanese Journal of Applied Physics 34 (Part 1, No. 8B), 4439-4445, August 1995.
RJ-69. Berthold, S., E. Zanoni, C. Canali, M. Pavesi, M. Pecchini, M. Manfredi, S.R. Bahl, and J. A. del Alamo, "Impact Ionization and Light Emission in InAlAs/InGaAs Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices 42 (4), 752-759, April 1995.
RJ-70. Wyss, R.A., C.C. Eugster, J. A. del Alamo, M.J. Rooks, M.R. Melloch, and Q. Hu, "Far-Infrared Radiation-Induced Thermopower in a Quantum Point Contact", Applied Physics Letters 66 (9), 1144-1146, February 1995.
RJ-68. Bahl, S.R., J. A. del Alamo, J. Dickmann, and S. Schildberg, "Off-State Breakdown in InAlAs/InGaAs MODFETs", IEEE Transactions on Electron Devices 42, 15-22, January 1995.