Publications
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1992
RC-45. Eugster, C.C., P.R. Nuytkens, and J. A. del Alamo, "A Novel Analog-to-Digital Conversion Architecture Using Electron Waveguides", 1992 International Electron Devices Meeting, San Francisco, CA, December 1992, p. 495.
RC-44. del Alamo, J. A. and C.C. Eugster, "Electron Waveguide Devices", (invited) 19th International Symposium on Gallium Arsenide and Related Compounds, Karuizawa, Japan, September 1992; in Institute of Physics Conference Series 129, 287-292, 1993.
RC-43. Eugster, C.C., J. A. del Alamo, M.R. Melloch, and M.J. Rooks, "Effects of Single Impurity Scattering on One-Dimensional Quantum-Effect Devices", 50th Annual Device Research Conference, Cambridge, MA, June 1992; abstract published in IEEE Transactions on Electron Devices 39, 2642-2643, November 1992.
RC-42. Chu, W., C.C. Eugster, A. Moel, E.E. Moon, J. A. del Alamo, H.I. Smith, M.L. Schattenburg, K.W. Rhee, M.C. Peckerar, and M.R. Melloch, "Observation of Conductance Quantization in a GaAs Electron Waveguide Device Fabricated by Contact X-Ray Lithography", 36th International Symposium on Electron, Ion, and Photon Beams, Orlando, FL, May 1992; in Journal of Vacuum Science and Technology B 10, 2966, November-December 1992.
RJ-51. Eugster, C.C., J. A. del Alamo, M.R. Melloch, and M.J. Rooks, "The Effects of Single Scatterers on Transport and Tunneling in a Dual Electron Waveguide Device", Physical Review B, 46, 10146-10151, October 1992.
RJ-50. Bahl, S.R., M.H. Leary, and J. A. del Alamo, "Mesa-Sidewall Gate-Leakage in InAlAs/InGaAs Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices 39, 2037-2043, September 1992.
RJ-48. Bahl, S.R. and J. A. del Alamo, "Elimination of Mesa-Sidewall Gate-Leakage in InAlAs/InGaAs Heterostructures by Selective Sidewall Recessing", IEEE Electron Device Letters, 13, 195, April 1992.
RJ-49. del Alamo, J. A., "GaAs Integrated Circuit Manufacturing", MRS Bulletin 17, 42-44, April 1992.
RC-41. Bennett, B.R. and J. A. del Alamo, "High Quality InGaAs/InP and InAlAs/InP Heterostructures Beyond the Matthews-Blakeslee Critical Layer Thickness", 4th International Conference on InP and Related Materials, Newport, RI, April 1992, p. 650.
RC-40. Bahl, S.R., B.R. Bennett, and J. A. del Alamo, "A High-Voltage, Doubly-Strained In0.42A10.59As/n+-In0.65Ga0.35As HFET", 4th International Conference on InP and Related Materials, Newport, RI, April 1992, p. 222.
RJ-47. Greenberg, D.R., J. A. del Alamo, and R. Bhat, "A Recessed-Gate InAlAs/n+-InP HFET with an InP Etch-Stop Layer", IEEE Electron Device Letters, 13, 137, March 1992.
RJ-45. Bahl, S.R. and J. A. del Alamo, "Breakdown Voltage Enhancement from Channel Quantization in InAlAs/n-InGaAs Heterostructure Field-Effect Transistors", IEEE Electron Device Letters 13, 123, February 1992.
RJ-46. Eugster, C.C., J. A. del Alamo, M.J. Rooks, and M.R. Melloch, "Split-Gate Dual Electron Waveguide Device", Applied Physics Letters 60, 642, February 1992.
RC-39. del Alamo, J. A. and C.C. Eugster, "Tunneling Spectroscopy of a Leaky Electron Waveguide", International Workshop on Quantum-Effect Physics, Electronics and Applications, Luxor, Egypt, January 1992; in Institute of Physics Conference Series 127, p. 225.
1991
RC-38. Greenberg, D. R., and J. A. del Alamo, "Impact of the Extrinsic Device on HFET Performance", 1991 Fall Meeting, Materials Research Society, Symposium E: Advanced III-V Compound Semiconductor Growth, Processing and Devices, Boston, MA (USA), December 1991, p. 585.
RJ-41. Eugster, C.C., T.P.E. Broekaert, J. A. del Alamo, and C.G. Fonstad, "An InAlAs/InAs MODFET", IEEE Electron Device Letters 12, 707, December 1991.
RJ-42. Eugster, C.C. and J. A. del Alamo, "Tunneling Spectroscopy of an Electron Waveguide, "Physical Review Letters 67, 3586, December 1991.
RJ-43. Bennett, B.R. and J. A. del Alamo, "Orthorhombic Distortion of Mismatched InxGa1-xAs Heterostructures", Journal of Electronic Materials 20, 1075, December 1991.
RC-37. Bennett, B. R., and J. A. del Alamo, "Relaxation of Mismatched InxAl1-xAs/InP Heterostructures", 1991 Fall Meeting, Materials Research Society, Symposium E: Advanced III-V Compound Semiconductor Growth, Processing and Devices, Boston, MA (USA), December 1991. p. 153.
RJ-44. Rooks, M. J., C. C. Eugster, J. A. del Alamo, G. Snider, and E. Hu, "Split Gate Electron Waveguide Fabrication Using Multilayer PMMA", in Journal of Vacuum Science and Technology B 9, 2856, November/December 1991.
RJ-40. Moran, P. W., S. Elliott, N. Wylie, R. M. Henderson, and J. A. del Alamo, "A Process Control Methodology Applied to Manufacturing GaAs MMICs", IEEE Transactions on Semiconductor Manufacturing 4, 304, November 1991.
RJ-39. Bahl, S.R., W.J. Azzam, and J. A. del Alamo, "Strained-Insulator InxAl1-xAs/N+-In0.53Ga0.47As Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices 38, 9, 1986-1992, September 1991.
RC-36. Bahl, S. R., and J. A. del Alamo, "Elimination of Mesa-Sidewall Gate Leakage in InalAs/InGaAs HFETs by Selective Sidewall Recessing", 18th International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington (USA), September 1991, p. 207.
RC-35. Eugster, C. C., and J. A. del Alamo, "Planar Coupled Electron Waveguides", 38th Scottish Universities Summer School in Physics on Physics of Nanostructures, August 1991; Physics of Nanostructures, J.H. Davies and A.R. Long, eds., IOP Publishing, 1992, p. 309.
RJ-38. Greenberg, D. R., J. A. del Alamo, J. P. Harbison, and L. T. Florez, "A Pseudomorphic AlGaAs/n+-InGaAs Metal-Insulator-Doped Channel FET for Broadband, Large-Signal Applications", IEEE Electron Device Letters 12 (8), 436-438, August 1991.
RJ-37. Bennett, B. R. and J. A. del Alamo, "Optical Anisotropy in Mismatched InGaAs/InP Heterostructures", Applied Physics Letters 58, (25), 2978-2980, June 24, 1991.
RJ-36. Eugster, C. C., J. A. del Alamo, P. A. Belk, and M. J. Rooks, "Criteria for the Observation of One-Dimensional Transport in Split-Gate Field-Effect Quantum Wires", Applied Physics Letters 58, (25), 2966-2968, June 24, 1991.
RC-34. Eugster, C. C., J. A. del Alamo, and M. J. Rooks, "Planar Field-Effect Coupled Quantum Wires", 49th Annual Device Research Conference, Boulder, Colorado (USA), June 17-19, 1991; abstract in IEEE Transaction on Electron Devices 38, 2715, November 1991.
RC-33. Rooks, M. J., C. C. Eugster, J. A. del Alamo, G. Snider, and E. Hu, "Split-Gate Electron Waveguide Fabrication Using Multilayer PMMA", 1991 International Symposium on Electron, Ion, and Photon Beams, Seattle, Washington (USA), May 1991; in Journal of Vacuum Science and Technology B 9, 2856, November/December 1991.34. Eugster, C. C., J. A. del Alamo, and M. J. Rooks, "Planar Field-Effect Coupled Quantum Wires", 49th Annual Device Research Conference, Boulder, Colorado (USA), June 17-19, 1991; abstract in IEEE Transaction on Electron Devices 38, 2715, November 1991.
RC-32. Greenberg, D. R., J. A. del Alamo, J. P. Harbison, and L. T. Florez, "The Physics of Scaling of Pseudomorphic AlGaAs/n+-InGaAs Heterostructure Field-Effect Transistors", State-of-the-Art Program on Compound Semiconductors, SOTAPOCS XIV, 179th Electrochemical Society Meeting, Washington, DC. (USA) May 5-10, 1991.
RC-31. Bennett, B. R., and J. A. del Alamo, "Orthorhombic Distortion of Mismatched InxGa1-xAs Heterostructures", 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, (Wales, UK), April 8-10, 1991, p. 335.
RC-30. Eugster, C. C., T. P. Broekaert, J. A. del Alamo, and C. G. Fonstad, "An InAlAs/InAs MODFET", 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, (Wales, UK), April 8-10, 1991, p. 335.
RJ-35. Bahl, S.R., W. J. Azzam, and J. A. del Alamo, "Orientation Dependence of Mismatched InxAl1-xAs/In0.53Ga0.47As HFETs", Journal of Crystal Growth, 111, 479, 1991.