Publications
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1987
RJ-24. del Alamo, J. A., and T. Mizutani, "An In0.52Al0.48As/n+- In0.53Ga0.47As MISFET with a Heavily-Doped Channel", IEEE Electron Device Letters EDL-8, 534, November 1987.
RJ-23. del Alamo, J. A., and R. M. Swanson, "Minority Carrier Transport in Heavily Doped Silicon: Fundamental Equations", Japanese Journal of Applied Physics (Part 1) 26, 1860, November 1987.
RJ-22. del Alamo, J. A., and R. M. Swanson, "Modeling of Minority Carrier Transport in Heavily Doped Silicon Emitters", Solid-State Electronics 30, 1127, November 1987.
RJ-21. del Alamo, J. A., and T. Mizutani, "Rapid Thermal Annealing of InP Using GaAs and InP Proximity Caps", Journal of Applied Physics 62, 3456, October 1987.
RJ-20. del Alamo, J. A., and R. M. Swanson, "Measurement of Steady-State Minority Carrier Transport Parameters in Heavily Doped n-Type Silicon", IEEE Transactions on Electron Devices ED-34, 1580, July 1987.
RJ-19. del Alamo, J. A., and T. Mizutani, "A Self-Aligned Enhancement-Mode AlGaAs/InP MISFET", IEEE Electron Device Letters EDL-8, 220, May 1987.
RJ-18. del Alamo, J. A., and R. M. Swanson, "Validity of the Quasi-Transparent Model of the Current Injected into Heavily Doped Emitters of Bipolar Devices", IEEE Transactions on Electron Devices ED-34, 455, February 1987.
1986
RC-18. Crabbé, E. F., S. Swirhun, J. A. del Alamo, R.F.W. Pease, and R. M. Swanson, "Majority and Minority Carrier Transport in Polysilicon-Emitter Contacts", International Electron Device Meeting, Los Angeles, CA, December 1986, p. 28; also in Polysilicon-Emitter Bipolar Transistors, A.K. Kapoor and D. J. Roulston (eds.), IEEE Press, 1989, p. 100.
RC-16. Crabbé, E. F., J. A. del Alamo, R.F.W. Pease, and R. M. Swanson, "A Novel Polysilicon-Collector Bipolar Transistor for the Study of Polysilicon-Emitter Interface Physics", 44th Annual Device Research Conference, Amherst, MA, June 1986; abstract published in IEEE Transactions on Electron Devices ED-33, 1853, November 1986.
RJ-17. del Alamo, J. A., and R. M. Swanson, "Forward-Bias Tunneling: A Limitation to Bipolar Device Scaling", IEEE Electron Device Letters EDL-7, 629, November 1986.
RC-17. del Alamo, J. A., and R. M. Swanson, "Forward-Bias Tunneling Current Limits in Scaled Bipolar Devices", 18th International Conference on Solid State Devices and Materials, Tokyo, Japan, August 1986, p. 283.
RJ-16. Swirhun, S. E., J. A. del Alamo, and R. M. Swanson, "Measurement of Hole Mobility in Heavily Doped n-type Silicon", IEEE Electron Device Letters EDL-7, 168, March 1986.
1985
RJ-15. del Alamo, J. A., and R. M. Swanson, "Fabrication and Characterization of Epitaxial Heavily Phosphorus-Doped Silicon", Journal of the Electrochemical Society 132, 3011, December 1985.
RC-14. del Alamo, J. A., S. Swirhun and R. M. Swanson, "Simultaneous Measurement of Hole Lifetime, Hole Mobility, and Bandgap Narrowing in Heavily Doped n-type Silicon", International Electron Device Meeting, Washington, DC, December 1985, p. 290.
RC-15. del Alamo, J. A., and R. M. Swanson, "Modeling of Minority Carrier Transport in Heavily Doped Silicon Emitters", (Invited), U.S. Belgium Joint Seminar on New Developments in the Physics of Homo- and Heterojunctions, Leuven, Belgium, May 1986, in Solid-State Electronics 30, 1127, November 1987.
RC-12. del Alamo, J. A., and R. M. Swanson, "Measurement of Minority Carrier Transport Parameters in Heavily Doped n-type Silicon", 43rd Annual Device Research Conference, Boulder, CO, June, 1985; abstract published in IEEE Transactions on Electron Device ED-32, 2555, November 1985.
RC-13. del Alamo, J. A., and R. M. Swanson, "Measurement of Heavy Doping Parameters in n-type Silicon", 18th IEEE Photovoltaic Specialists Conference, Las Vegas, NV, October 1985, p. 584.
RJ-14. del Alamo, J. A., and R. M. Swanson, "Measurement of Hall Scattering Factor in Phosphorus-Doped Silicon", Journal of Applied Physics 57, 2314, March 1985.
RC-11. del Alamo, J. A., S. Swirhun and R. M. Swanson, "Measuring and Modeling Minority Carrier Transport in Heavily Doped Silicon", (Invited), International Conference on Heavy Doping and the Metal-Insulator Transition in Semiconductors, Santa Cruz, CA, July 1984; published in Solid-State Electronics 28, 47, January/February 1985.
RJ-13. del Alamo, J. A., S. Swirhun, and R. M. Swanson, "Measuring and Modeling Minority Carrier Transport in Heavily Doped Silicon", Solid-State Electronics 28, 47, January/February 1985.