Varying Behaviors of Gate Voltage Dependence of Raman Spectra of Graphene

  • Authors: M. S. Dresselhaus, P. T. Araujo
  • Sponsorship: NSF

Paulo T. Araujo has been using MTL facilities through 2011/2012 to fulfill one step of his device fabrication. In general, the devices are made by graphite exfoliation so that a single layer of graphene is sitting on a 300-nm-thick layer of SiO2. After the standard lithography steps used to design from two to four contacts over the graphene layer, titanium and gold are deposited. The metals are deposited by utilizing the e-beam evaporator from EML at MTL headquarters. The devices were used in gate-modulated Raman experiments, which allow us to observe phonon energy renormalizations by observing gate-voltage dependent changes in its Raman signatures [1] [2] [3] [4] .

  1. J. Yan, E. A. Henriksen, P. Kim, and A. Pinczuk, Phys. Rev. Lett. 101, 136804 (2008). [↩]
  2. J. Yan et al., Solid State Comm. 143, 39 (2007). [↩]
  3. L. M. Malard, D. C. Elias, E. S. Alves, and M. A. Pimenta, Phys. Rev. Lett. 101, 257401 (2008). [↩]
  4. A. H. Castro Neto et al., Rev. Mod. Phys. 81, 109 (2009). [↩]

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