Removable Template for Block Copolymer Directed Self-Assembly

Self-assembled block copolymer structures are useful in nanolithography applications, producing patterns with high resolution and throughput. We previously showed control over the direction of in-plane cylindrical microdomains formed by self-assembly of a block copolymer (BCP) using a variety of physical templates made from hydrogen silsesquioxane (HSQ) resist [1] [2] . The HSQ templates were fabricated by electron-beam lithography and then functionalized with a minority or majority block brush to interact with the BCP and direct the self-assembly (as shown in Figure 1). However, HSQ templates were not easily removed and remained as part of the final pattern. Remaining HSQ caused non-uniform pattern transfer due to dissimilar etch rates between the BCP and HSQ. In this study, we solved this issue by using a removable-resist template coated with an etchable-block brush. We fabricated two- and three-dimensional BCP patterns and then removed the templates. Examples (Figure 2) include three-dimensional bends, junctions and mesh-shaped structures, and the ability to change the BCP morphology through templating.

The negative-tone-post templates were made by electron-beam lithography of poly (methyl methacrylate) (PMMA) resist at high dose (100-600 pC/pixel). After development of patterns using methyl isobutyl ketone (MIBK) and acetone ultrasonication, the surface of the patterns was coated with hydroxyl-terminated polystyrene (PS) brush (1 kg mol-1). Then poly(styrene-b-dimethylsiloxane) (PS-b-PDMS) BCP (MW=45.5 kg mol-1, f_PDMS=0.32, period 35 nm) was spun and solvent annealed with a mixture of heptane and toluene. CF4 and O2 reactive ion etch (RIE) was used to remove the top PDMS layer and the PS matrix.  The O2 RIE not only removed not only the PS matrix but also removed the PMMA template in the same step. The final results were in-plane oxidized-PDMS cylindrical microdomain patterns in the form of two- and three-dimensional structures devoid of templates. This study provides a path to complex pattern formation for nanolithography with feature sizes below 20 nm.

  1. Yang, J. K. W. et al. Nature Nanotechnology 5, 256-260, 2010. []
  2. Duan H. et al. Journal of Vacuum Science and Technology B 28 C6C58-C6C62, 2010. []