Jesús A. del Alamo

  • Title: Donner Professor, MacVicar Faculty Fellow
  • Department: Department of Electrical Engineering and Computer Science

Collaborators

  • J. Jimenez, Triquint Semiconductor
  • D.H. Kim, Teledyne Scientific
  • T.-W. Kim, Sematech
  • B. R. Bennett, NRL

Graduate Students

  • A. Guo, RA EECS
  • L. Guo, RA EECS
  • D.H. Jin, RA, EECS
  • J. Lin, RA EECS
  • S. Warnock, RA EECS
  • X. Zhao, RA, DMSE

Support Staff

  • E. Kubicki, Administrative Assistant II

Publications

Xia, L., B. Boos, B. R. Bennett, M. G. Ancona, and J. A. del Alamo, ”Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field-Effect transistors.” Applied Physics Letters, vol. 98, 053505, 2011.

Kharche, H., G. Klimeck, D.-H. Kim, J. A. del Alamo, and M. Luisier, ”Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs.” IEEE Transactions on Electron Devices, Vol. 58, no. 7, p. 1963, July 2011.

Xia, L., V. Tokranov, S. R. Oktyabrsky, and J. A. del Alamo, ”Experimental Study of <100> Uniaxial Stress Effects on P-channel GaAs Quantum-Well FETs.” IEEE Transactions on Electron Devices, vol. 58, no. 8, p. 2597, August 2011.

del Alamo, J. A. ”Nanometer-scale electronics with III-V compound semiconductors.” Invited Review paper. Nature, vol. 479, p. 317, 17 November 2011.

Joh, J. and J. A. del Alamo, “Impact of gate placement on RF degradation in GaN high electron mobility transistors.” Microelectronics Reliability, vol. 52, no. 1, p. 33, January 2012.

Li, L., J. Joh, J. A. del Alamo and C. V. Thompson, “Spatial distribution of structural degradation under high-power stress in AlGaN/GaN High-Electron Mobility Transistors.” Applied Physics Letters, vol. 100, p. 172109, 2012.

Joh, J. and J. A. del Alamo, “Time evolution of electrical degradation in GaN high electron mobility transistors.” IEEE International Reliability Physics Symposium, Monterey, CA, April 2011.

del Alamo, J. A., “The High-Electron Mobility Transistor at 30: impressive accomplishments and exciting prospects.” Invited Plenary Session talk at International Conference on Compound Semiconductor Manufacturing Technology, Palm Springs, CA, May 2011, p. 17.

del Alamo, J. A., D.-H. Kim, T.-W. Kim, D. Jin, and D. A. Antoniadis, “III-V CMOS: What Have we Learned from HEMTs?” Invited talk at the 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, May 2011.

Kim, T.-W and J. A. del Alamo, “Injection Velocity in Thin-Channel InAs HEMTs.” 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, May 2011.

Xia, L., V. Tokranov, S. Oktyabrsky and J. A. del Alamo, “Mobility Enhancement of Two-Dimensional hole Gas in an In0.24Ga0.76As Quantum Well by <100> Uniaxial Strain.” 38th International Symposium on Compound Semiconductors, Berlin, Germany, May 2011, p. 396.

Gogineni, U., J. A. del Alamo and A. Valdes Garcia, “Analytical Model for RF Power Performance of Deeply Scaled CMOS Devices.” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Baltimore, MD, June 2011.

del Alamo, J. A., “InAs HEMTs: the path to THz electronics?” Invited talk at Workshop on High-Performance Narrow-Bandgap HEMT Technology for Advanced Microwave Front-Ends: Towards the End of the Roadmap? European Microwave Week, Manchester, UK, October 2011.

Xia, L., V. Tokranov, S. R. Oktyabrsky, and J. A. del Alamo, “Performance Enhancement of p-channel InGaAs Quantum-Well FETs by Superposition of Process-Induced Uniaxial Strain and Epitaxially-grown Biaxial Strain.” IEEE International Electron Devices Meeting, Washington DC, December 2011, p. 315.

Kim, D.-H., B. Brar and J. A. del Alamo, “fT=688 GHz and fmax=800 GHz in Lg=40 nm In0.7Ga0.3As MHEMTs with gm,max>2.7 mS/um.” IEEE International Electron Devices Meeting, Washington DC, December 2011, p. 319.

Faculty & Topics