MTL Annual Research Report 2011

Collaborators

• J. L. Hoyt, EECS
• T. Palacios, EECS
• J. del Alamo, EECS
• E. A. Fitzgerald, DMSE
• T. Equi, FCRP Materials, Structures, and Devices Focus Center, Executive Director
• Chang-Hyun Lee, Visiting Scientists, Samsung Semiconductor

Postdoctoral Associate

• L. Wei, Post Doctoral Fellow

Graduate Students

• J. Teherani, Res. Asst., EECS
• J. Lin, Res. Asst., EECS
• E. Polyzoeva, Res. Asst. EECS

Support Staff

• W. Rokui, Admin. Asst. II

Publications

D. A. Antoniadis; “ Nanoelectronics Challenges for the 21st Century,” 23rd International Conference on VLSI Design, Bangalore, India, January 2010. (Keynote speaker).

D. A. Antoniadis; “Nanoelectronics Challenges for the 21^st Century,” Design, Automation, and Test in Europe, DATE 2010, (Keynote speaker).

Kim, D.-H.; del Alamo, J.A.; Antoniadis, D.A.; Brar, B.; “Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs,” International Electron Devices Meeting (IEDM), 2009

P. Hashemi, M. Kim, J. Hennessy, L. Gomez, D. A. Antoniadis, and J. L.Hoyt; “Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors”, Applied Physics Letters, Vol. 96, pp. 063109-063109-3, 2010.

B. S. Ong, K. L. Pey, C. Y. Ong, C. S. Tan, C. L. Gan, H. Cai, D. A. Antoniadis, and E. A. Fitzgeral; “Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide- Semiconductor Capacitors,” Electrochem. Solid-State Lett. 13, H328 (2010)

J. Luo, L. Wei, F. Boeuf, D. Antoniadis, T. Skotnicki, and H.-S. P. Wong, “Device Engineering for  Improving SRAM Static Noise Margin,” 2010 International Conference on Solid State Devices and Materials (SSDM 2010), paper C-4-3, Tokyo, Japan, September  22 – 24, 2010.