Publications 2022
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RC-306 Onen, M., J. Li, B. Yildiz and J. A. del Alamo, “CMOS-Compatible Nanosecond Protonic Programmable Resistors for Analog Deep Learning.” 2022 Non-Volatile Memory Technology Symposium (NVMTS 2022), Stanford, CA, December 7-9, 2022. (Slides)
RC-305 Onen, M., J. Li, B. Yildiz and J. A. del Alamo, “Dynamics of PSG-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning.” 2022 IEEE International Electron Devices Meeting (IEDM 2022), San Francisco, CA, December 3-7, 2022, pp. 38-41. (DOI) (Slides)
RC-304 Yildiz, B., M. Huang, M. Onen, M. Schwacke, X. Yao, M. Fee, J. Li, J. del Alamo, “Electrochemical Ionic Synapses for Analog Deep Learning and Beyond.” Keynote talk at 5th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2022), Cambridge, MA, November 30-December 2, 2022. (Slides)
RC-303 del Alamo, J. A., M. Onen, J. Li, and B. Yildiz, “PSG-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning.” Keynote talk at 5th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2022), Cambridge, MA, November 30-December 2, 2022. (Slides)
RC-302 Onen, M., N. Emond. J. Li, B. Yildiz and J. A. del Alamo, “CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte.” 23rd International Conference on Solid-State Ionics (SSI 2022), Boston, MA, June 17-22, 2022. (Slides)
RC-301 Huang, M., M. Onen, J. A. del Alamo, J. Li and B. Yildiz, “An Equivalent Circuit Model of Electrochemical Artificial Synapses for Neuromorphic Computing.” 23rd International Conference on Solid-State Ionics (SSI 2022), Boston, MA, June 17-22, 2022.
RC-300 Schwacke, M., J. A. del Alamo, J. Li and B. Yildiz, “Electrochemical Artificial Synapses Based on Intercalation of Mg2+ Ions.” 23rd International Conference on Solid-State Ionics (SSI 2022), Boston, MA, June 17-22, 2022.
RC-299 Lee, E. S., J. Joh, D. S. Lee and J. A. del Alamo, “Gate-geometry dependence of dynamic Vt in p-GaN gate HEMTs.” 2022 International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022), Vancouver, Canada, May 22-26, 2022, pp. 201-204. (DOI) (Slides)
RC-298 Lee, E. S., J. Joh, D. S. Lee and J. A. del Alamo, “Impact of Gate Offset on PBTI of p-GaN Gate HEMTs.” 2022 IEEE International Reliability Physics Symposium (IRPS 2022), Dallas, TX, March 27-31, 2022, pp. P21-1-P21-6. (DOI) (Slides)
RJ-222 MIT Microelectronics Group, "Reasserting US Leadership in Microelectronics: The Role of Universities.” The Bridge, Vol. 52, Issue 4, Winter 2022. (Link)
RJ-221 Onen, M., N. Emond, B. Wang, D. Zhang, F. Ross, J. Li, B. Yildiz and J. A. del Alamo, "Nanosecond Protonic Programmable Resistors under Extreme Electric Field.” Science, Vol. 377, pp. 539-543, 29 July 2022. (DOI)
RJ-220 Kim, T., J. A. del Alamo and D. A. Antoniadis, "Switching Dynamics in Metal-Ferroelectric HfZrO2-Metal Structures.” IEEE Transactions on Electron Devices, Vol. 69, No. 7, pp. 4016-4021, July 2022. (DOI)
RJ-219 Vardi, A., M. Tordjman, R. Kalish and J. A. del Alamo, "WO3 passivation of access regions in Diamond MOSFETs.” IEEE Transactions on Electron Devices, Vol. 69, No. 6, pp. 3334-3340, June 2022. (DOI: 10.1109/TED.2022.316573.)
RJ-218 Shao, Y. and J. A. del Alamo, "Sub-10 nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs.” IEEE Electron Device Letters, Vol. 43, No. 6, pp. 846-849, June 2022. (DOI)
RJ-217 Onen, M., T. Gokmen, T. K. Todorov, T. Nowicki, J. A. del Alamo, J. Rozen, W. Haensch and S. Kim, "Neural Network Training with Asymmetric Crosspoint Elements.” Frontiers in Artificial Intelligence, Vol. 5, Article 891624, 09 May 2022. (DOI)
RJ-216 Shao, Y., M. Pala, D. Esseni and J. A. del Alamo, "Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10 nm Diameter.” IEEE Transactions on Electron Devices, Vol. 69, No. 4, pp. 2188-2196, April 2022. (DOI)
RJ-215 Lee, E. S., J. Joh, D. S. Lee and J. A. del Alamo, “Gate-Geometry Dependence of Electrical Characteristics of p-GaN Gate HEMTs.” Applied Physics Letters, Vol. 120, 082104, 23 February 2022. (DOI)
RJ-214 Antoniadis, D., T. Kim and J. A. del Alamo, "Nucleation-Limited Switching Dynamics Model for Efficient Ferroelectrics Circuit Simulation.” IEEE Transactions on Electron Devices, Vol. 69, No. 1, pp. 395-399, January 2022. (DOI)