MTL News Archives for 2012

Tiny compound semiconductor transistor could challenge silicon's dominance

December 10, 2012

MIT researchers develop the smallest indium gallium arsenide transistor ever built.


A cross-section transmission electron micrograph of the fabricated transistor. The central inverted V is the gate. The two molybdenum contacts on either side are the source and drain of the transistor. The channel is the indium gallium arsenide light color layer under the source, drain and gate. Image courtesy of the researchers

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