{"id":1993,"date":"2013-08-14T16:32:01","date_gmt":"2013-08-14T16:32:01","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/?p=1993"},"modified":"2013-08-15T14:43:37","modified_gmt":"2013-08-15T14:43:37","slug":"gan-energy-initiative","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/gan-energy-initiative\/","title":{"rendered":"MIT\/MTL Gallium Nitride(GaN) Energy Initiative"},"content":{"rendered":"

The MIT\/MTL Gallium Nitride (GaN) Energy Initiative (MIT-GaN) is a inter-departmental program that brings together MIT researchers and industrial partners to advance the science and engineering of GaN-based materials and devices for energy applications.<\/p>\n

The Center explores advanced technologies and strategies that enable GaN-based materials, devices and systems to provide discriminating or break-through capabilities for a variety of system applications ranging from RF power amplification, to energy processing and power management, as well as advanced optoelectronics.\u00a0The MIT-GaN is focused on GaN materials and devices which are compatible with Si fabrication technologies and works with industrial partners to accelerate the insertion of these devices into systems.<\/p>\n

Membership Privileges for MIT\/MTL Gallium Nitride(GaN)Energy Initiative include:<\/p>\n

Staying abreast of research developments in GaN<\/strong><\/h3>\n