{"id":1943,"date":"2013-08-14T00:20:12","date_gmt":"2013-08-14T00:20:12","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/?p=1943"},"modified":"2013-08-14T16:44:40","modified_gmt":"2013-08-14T16:44:40","slug":"jesus-a-del-alamo","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/jesus-a-del-alamo\/","title":{"rendered":"Jes\u00fas A. del Alamo"},"content":{"rendered":"<h3>Collaborators<\/h3>\n<ul>\n<li>L.J. Brillson, Ohio State University<\/li>\n<li>J. Jimenez, Triquint Semiconductor<\/li>\n<li>D.H. Kim, Teledyne<\/li>\n<li>T.-W. Kim, Global Foundries<\/li>\n<li>B. R. Bennett, NRL<\/li>\n<\/ul>\n<h3>Postdoctoral Associates<\/h3>\n<ul>\n<li>A. Vardy, MIT-Technion Fellow<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>A. Guo, NDSEG Fellowship<\/li>\n<li>L. Guo, NSF Fellow<\/li>\n<li>D.H. Jin, Samsung Fellow<\/li>\n<li>J. Lin, RA EECS<\/li>\n<li>W. Lu, RA EECS<\/li>\n<li>S. Warnock, RA EECS<\/li>\n<li>Y. Wu, RA EECS<\/li>\n<li>X. Zhao, RA, DMSE<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>E. Kubicki, Administrative Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>del Alamo, J. A., \u201cRecent progress in understanding the DC and RF reliability of GaN high-electron mobility transistors.\u201d <em>Invited talk at Materials Research Society Spring Meeting<\/em>, April 9-13, 2012.<\/p>\n<p>Lin, J., T.-W. Kim, D. A. Antoniadis and J. A. del Alamo, \u201cA Self-Aligned InGaAs Quantum-Well MOSFET Fabricated through a Lift-off Free Front-end Process.\u201d <em>Applied Physics Express<\/em>, Vol. 5, p. 064002, May 16, 2012.<\/p>\n<p>Jin, D. and J. A. del Alamo, \u201cMechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs.\u201d <em>24th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)<\/em>, June 3-7, 2012, pp. 333-346.<\/p>\n<p>Kim, T.-W., R. J. W. Hill, C. D. Young, D. Veksler, J. Oh, C. Y. Kang, D.-H. Kim, J. A. del Alamo, C. Hobbs, P. Kirsch and R. Jammy, \u201cInAs Quantum-Well MOSFET (Lg=100 nm) with Record High gm, fT and fmax.\u201d <em>2012 Symposium on VLSI Technology<\/em>, June 12-15, 2012, pp. 179-180.<\/p>\n<p>del Alamo, J. A. and D.-H. Kim, \u201cInAs High-Electron Mobility Transistors on the Path to THz Operation.\u201d <em>Invited paper at International Conference on Solid State Devices and Materials (SSDM)<\/em>, September 25-27, 2012.<\/p>\n<p>del Alamo, J. A., \u201cNanometer-Scale III-V CMOS.\u201d Short Course on the Future of Semiconductor Devices and Integrated Circuits at 34th <em>IEEE Compound Semiconductor IC Symposium (CSICS<\/em>), October 14, 2012.<\/p>\n<p>Lin, C.-H., T. A. Merz, D. R. Doutt, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, \u201dStrain and temperature dependence of defect formation at AlGaN\/GaN high electron mobility transistors on a nanometer scale.\u201d<em> IEEE Transactions on Electron Devices<\/em>, Vol. 59, No. 10, pp. 2667-2674, October 2012.<\/p>\n<p>Lin, J., D. A. Antoniadis, and J. A. del Alamo, \u201cSub-30 nm In As Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO2 Insulator.\u201d <em>IEEE International Electron Devices Meeting<\/em>, December 10-12, 2012, pp. 757-760.<\/p>\n<p>Kim, T.-W. , R. J. W. Hill, D. Kim, D.-H. Koh, R. Lee, M. H Wong, T. Cunningham, J. A. del Alamo, S. K. Banerjee, S. Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G. Nakamura, Q. Li, K. M. Lau, C. Hobbs, P. D. Kirsch and R. Jammy, \u201cETW-QW InAs MOSFETs with Scaled Body for Improved Electrostatics.\u201d IEEE <em>International Electron Devices Meeting<\/em>, CA, December 10-12, 2012, pp. 765-768.<\/p>\n<p>Jin, D. and J. A. del Alamo, \u201dImpact of high-power stress on dynamic ON resistance of high-voltage GaN HEMTs.\u201d <em>Microelectronics Reliability<\/em>, Vol. 52, pp. 2875-2879 (2012).<\/p>\n<p>Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou, C. King, E. Regan, M. Urteaga, B. Brar, and T.-W. Kim, \u201dLg=60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator.\u201d <em>Applied Physics Letters<\/em>, Vol. 101, p. 223507, 2012.<\/p>\n<p>Kim, D.-H., T.-W. Kim, R. J. W. Hill, C. D. Young, C. Y. Kang, C. Hobbs, P. Kirsch, J. A. del Alamo, and R. Jammy, \u201dHigh-Speed E-Mode InAs QW MOSFET with Al2O3 Insulator for Future RF Applications.\u201d <em>IEEE Electron Device Letters<\/em>, Vol. 34, No. 2, pp. 196-198, February 2013.<\/p>\n<p>del Alamo, J. A. , \u201cTHz III-V HEMT Technology.\u201d Short Course on THz Transistors and Packaging Integration Technologies, <em>International Wireless Symposium<\/em>, April 14-18, 2013.<\/p>\n<p>Guo, A. and J. A. del Alamo, \u201cMo\/n+-InGaAs Nanocontacts for Future III-V MOSFETs.\u201d To be presented at <em>25th International Conference on Indium Phosphide and Related Materials<\/em>, May 19-23, 2013.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Compound semiconductor transistor technologies for RF, microwave and millimeter wave applications. Nanometer-scale III-V compound semiconductor transistors for future digital applications. Reliability of compound semiconductor transistors. Technology and pedagogy of online laboratories for engineering education. <\/p>\n","protected":false},"author":370,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[4080],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1943"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1943"}],"version-history":[{"count":6,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1943\/revisions"}],"predecessor-version":[{"id":2483,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1943\/revisions\/2483"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media?parent=1943"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/categories?post=1943"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/tags?post=1943"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}