{"id":1909,"date":"2013-08-14T16:39:02","date_gmt":"2013-08-14T16:39:02","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/?p=1909"},"modified":"2013-08-14T16:53:48","modified_gmt":"2013-08-14T16:53:48","slug":"tomas-palacios","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/tomas-palacios\/","title":{"rendered":"Tom\u00e1s Palacios"},"content":{"rendered":"<h3>Collaborators<\/h3>\n<ul>\n<li>D. Antoniadis, MIT<\/li>\n<li>J. del Alamo, MIT<\/li>\n<li>P. Jarillo-Herrero, MIT<\/li>\n<li>D. Jena, University of Notre Dame<\/li>\n<li>J. Kong, MIT<\/li>\n<li>U. K. Mishra, University of California \u2013 Santa Barbara<\/li>\n<li>E. Monroy, CEA-Grenoble, France<\/li>\n<li>E. Munoz, ETSIT-UPM, Spain<\/li>\n<li>D. Perreault, MIT<\/li>\n<li>C. Thompson, MIT<\/li>\n<li>H. Xing, University of Notre Dame<\/li>\n<\/ul>\n<h3>Visiting Scientists<\/h3>\n<ul>\n<li>M. Azize, Post Doc, France<\/li>\n<li>T. Fujishima, Post Doc, Japan<\/li>\n<li>T.Imada, Post Doc, Japan<\/li>\n<li>P.Srivastava, Post Doc, Belgium<\/li>\n<li>H.-S. Lee, Post Doc, South Korea<\/li>\n<li>Z. Liu, Post Doc-SMART, Singapore<\/li>\n<li>C.C. Huang, Post Doc-SMART, Singapore<\/li>\n<li>E. Matioli, Post Doc, Brazil<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>F. Gao, Research Assistant<\/li>\n<li>S. Ha, Research Assistant<\/li>\n<li>A. Hsu, Research Assistant<\/li>\n<li>D. S. Lee, Research Assistant<\/li>\n<li>S. Joglekar, Research Assistant<\/li>\n<li>X. Lin, Research Assistant<\/li>\n<li>B. Lu, Research Assistant<\/li>\n<li>C. Mackin, Research Assistant<\/li>\n<li>B. Mailly, Research Assistant<\/li>\n<li>D. Piedra, Research Assistant<\/li>\n<li>O. I. Saadat, Research Assistant<\/li>\n<li>M. Sun, Research Assistant<\/li>\n<li>H. Wang, Research Assistant<\/li>\n<li>L. Yu, Research Assistant<\/li>\n<li>X. Zhang, Research Assistant<\/li>\n<li>Y. Zhang, Research Assistant<\/li>\n<li>A. Zubair, Research Assistant<\/li>\n<\/ul>\n<h3>Undergraduate Students<\/h3>\n<ul>\n<li>R. Luo<\/li>\n<li>J.Maswan<\/li>\n<li>W.Gaviria<\/li>\n<li>P. Nardecchia<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>J. Baylon, Admin Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>Gao, F., B. Lu, L. Li, S. Kaun, J. S. Speck, C. V. Thompson, and T. Palacios, \u201cRole of Oxygen in the OFF-State Degradation of AlGaN\/GaN HEMTs,\u201d <em>Appl. Phys. Letts<\/em>., vol. 99, pp. 223506, 2012.<\/p>\n<p>K. K. Kim, A. Hsu, X. T. Jia, S. M. Kim, Y. M. Shi, M. Dresselhaus, T. Palacios, and J. Kong, \u201cSynthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices,\u201d <em>ACS Nano<\/em>, vol. 6, pp. 8583-8590, 2012.<\/p>\n<p>F. Gao, D. Chen, B. Lu, H. L. Tuller, C. V. Thompson, S. Keller, U. K. Mishra, and T. Palacios, \u201cImpact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN\/GaN HEMTs,\u201d <em>IEEE Electron Dev. Letts.<\/em>, vol. 33, pp. 1378-1380, 2012.<\/p>\n<p>H. Wang, L .Yu, Y. H. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, J. Kong, and T. Palacios, \u201cLarge-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition,\u201d <em>International Electron Device Meeting<\/em>, San Francisco, December, 2012. (Best paper award)<\/p>\n<p>H. Wang, L. L. Yu, Y. H. Lee, Y. M. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, \u201cIntegrated Circuits Based on Bilayer MoS2 Transistors,\u201d <em>Nano Letters<\/em>, vol. 12, Pp. 4674-4680, 2012.<\/p>\n<p>S. DasGupta, M. Sun, A. Armstrong, R. J. Kaplar, M. J. Marinella, J. B. Stanley, S. Atcitty, and T. Palacios, \u201cSlow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN\/GaN HEMTs,\u201d <em>IEEE Trans. On Elect. Dev.<\/em>, vol. 59, pp. 2115-2122, 2012.<\/p>\n<p>M. Sun, H.-S. Lee, B. Lu, D. Piedra, and T. Palacios, \u201cComparative Breakdown Analysis of Mesa and Ion Implantation Isolated AlGaN\/GaN HEMTs on Si Subtrate,\u201d <em>Appl. Phys. Express<\/em>, vol. 5, pp. 074202, 2012.<\/p>\n<p>D. S. Lee, O. Laboutin, Y. Cao, W. Johnson, E. Beam, A. Ketterson, M. Schuette, P. Saunier, and T. Palacios, \u201cImpact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs,\u201d <em>IEEE Electron Dev. Letts.<\/em>, vol. 33, pp. 976-978, 2012.<\/p>\n<p>B. Lu, E. Matioli, and T. Palacios, \u201cTri-Gate Normally-off GaN Power MISFET,\u201d <em>IEEE Electron Dev. Letts.<\/em> Vol. 33, pp. 360-362, 2012. (Best paper award)<\/p>\n<p>H. S. Lee, D. Piedra, M. Sun, X. Gao, S. P. Guo, T. Palacios, \u201c3000 V 4.3 \uf057cm2 InAlN\/GaN MOSHEMTs with AlGaN Back Barrier,\u201d <em>IEEE Electron Dev. Letts.<\/em>, vol. 33, pp. 982-984, 2012.<\/p>\n<p>X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma, \u201cStudy of\u00a0 Gate Oxide Traps in HfO2\/AlGaN\/GaN metal-oxide-semiconductor high electron mobility transistors by use of ac transconductance method,\u201d Appl. Phys. Letts., vol. 102, pp. 103504, 2013<\/p>\n<p>A. Hsu, H. Wang, Y. C. Shin, B. Mailly, X. Zhang, L .Yu, Y. Shi, Y. H. Lee, M. Dubey, K. K. Kim, J. Kong, and T. Palacios, \u201cLarge-Area 2D Electronics: Materials, Technology, and Devices,\u201d <em>Proceedings of the IEEE, in press<\/em> (2013). Invited paper.<\/p>\n<p>B. Lu, M. Sun, and T. Palacios, \u201cAn Etch-Stop Barrier Structure for GaN High Electron Mobility Transistors,\u201d <em>IEEE Electron Dev. Letts.<\/em>, vol. 34, pp. 369-371, 2013.<\/p>\n<p>S. M. Kim, A. Hsu, P. T. Araujo, Y. H. Lee, T. Palacios, M. Dresselhaus, J. C. Idrobo, K. K. Kim, and J. Kong, \u201cSynthesis of\u00a0 Patched or Stacked Graphene and hBN Flakes: A Route to Hybrid Structure Discovery,\u201d <em>Nano Letters<\/em>, vol. 13, pp. 933-941, 2013.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors and graphene; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices; transistors based on nanowires two dimensional materials.<\/p>\n","protected":false},"author":370,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[60],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1909"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1909"}],"version-history":[{"count":4,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1909\/revisions"}],"predecessor-version":[{"id":2478,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1909\/revisions\/2478"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media?parent=1909"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/categories?post=1909"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/tags?post=1909"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}